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[资源] Epitaxial Crystal Growth： Methods and Materials

Abstracts

The epitaxial growth of thin films of material
for a wide range of applications in electronics
and optoelectronics is a critical activity in many
industries. The original growth technique used,
in most instances, was liquid-phase epitaxy
(LPE), as this was the simplest and often the
cheapest route to producing device-quality layers.
These days, while some production processes
are still based on LPE, most research into
and (increasingly) much of the production of
electronic and optoelectronic devices now centers
on metalorganic chemical vapor deposition
(MOCVD) and molecular beam epitaxy (MBE). These
techniques are more versatile than LPE (although
the equipment is more expensive), and they
can readily produce multilayer structures with
atomic-layer control, which has become more
and more important in the type of nanoscale
engineering used to produce device structures
in as-grown multilayers. This chapter covers
these three basic techniques, including some of
their more common variants, and outlines the
relative advantages and disadvantages of each.
Some examples of growth in various important
systems are also outlined for each of the three
techniques.

Contents

1 Liquid-Phase Epitaxy (LPE)
1.1 Introduction and Background
1.2 History and Status
1.3 Characteristics
1.4 Apparatus and Techniques
1.5 Group IV
1.6 Group III–V
1.7 Group II–VI
1.8 Atomically Flat Surfaces
1.9 Conclusions

2 Metalorganic Chemical Vapor Deposition MOCVD)
2.1 Introduction and Background
2.2 Basic Reaction Kinetics
2.3 Precursors
2.4 Reactor Cells
2.5 III–V MOCVD
2.6 II–VI MOCVD
2.7 Conclusions

3 Molecular Beam Epitaxy (MBE)
3.1 Introduction and Background
3.2 Reaction Mechanisms
3.3 MBE Growth Systems
3.4 Gas Sources in MBE
3.5 Growth of III–V Materials by MBE
3.6 Conclusions
References

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