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In many of the spin electronic devices, the properties of insulating layers have a determinant effect on device performance. Notably, MgO is an important material and often used for the fabrication of high-quality spintronics devices as well as in basic spintronic research. Initially, Parkin et al. 1), and Yuasa et al.2) reported that magnetic tunnel junctions (MTJs) consisting of ferromagnetic electrodes and an MgO barrier have exhibited significantly high tunneling magnetoresistance (TMR). Since then, it is found that not only in MTJs, but also in all kinds of spin electronics, such as: the metallic lateral spin valves3), abnormal Hall effect4), as well as anisotropic magnetoresistance (AMR) effect5), the use of MgO layers will significantly improve the devices performance.

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The properties of the insulating layers play an important role in the performance of many spin electronic devices. As an important insulating material for fabricating high-quality spintronic devices, MgO has been widely studied in basic spintronic research. Since the original demonstration by Parkin et al. 1 and Yuasa et al. 2 that the magnetic tunnel junctions (MTJs) composed of a MgO barrier layer on (in) ferromagnetic electrodes exhibits significantly high tunneling magnetoresistance (TMR) (Ref, MgO layers have been applied in various kinds of spin related electronic devices to improve the performances, such as MTJs, metallic lateral spin valves3), abnormal Hall effect4), and anisotropic magnetoresistance (AMR) effect5).
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