| 查看: 809 | 回复: 1 | ||
| 本帖产生 1 个 翻译EPI ，点击这里进行查看 | ||
[求助]
求助帮我润润色英语啊
|
||
|
In many of the spin electronic devices, the properties of insulating layers have a determinant effect on device performance. Notably, MgO is an important material and often used for the fabrication of high-quality spintronics devices as well as in basic spintronic research. Initially, Parkin et al. 1), and Yuasa et al.2) reported that magnetic tunnel junctions (MTJs) consisting of ferromagnetic electrodes and an MgO barrier have exhibited significantly high tunneling magnetoresistance (TMR). Since then, it is found that not only in MTJs, but also in all kinds of spin electronics, such as: the metallic lateral spin valves3), abnormal Hall effect4), as well as anisotropic magnetoresistance (AMR) effect5), the use of MgO layers will significantly improve the devices performance. 这段是我的其中一篇文章的引言. 现在正在写另外的一篇文章,内容肯定不一样,你知道的,一般自己的文章的有些部分的前沿的一部分会大体相当,但又不能原封不动的照搬,这就是抄袭啦, 所以求助一下诸位,帮我改改, 原意不便, 修改修改. |
回复此楼» 猜你喜欢
纯娱乐，不喜欢勿喷
已经有8人回复
-
售SCI文章，我:8O.5.5.1O.54,科目全,可十急
已经有6人回复
-
售SCI-T0P文章，我:8O.5.5.1.O.54,科目齐全,可+急
已经有6人回复
-
售SCI一区文章，我:8.O.55.1.O.54,科目齐全,可伽急
已经有7人回复
-
售SCI一区T0P文章，我:8O.55.1.O.5.4,科目齐全,可+急
已经有4人回复
-
娱乐
已经有3人回复
-
面上提前没消息，有中的吗
已经有17人回复
-
售SCI一区T0P文章，我:8O.55.1.O.54,科目全,可伽急
已经有7人回复
-
售SCI-T0P文章，我:8O.5.5.1.O.54,科目齐全,可+急
已经有5人回复
-
售SCI一区文章，我:8O5.5.1.O5.4,科目全,可伽急
已经有10人回复
hookhans
铁杆木虫 (著名写手)
Farmer
- 翻译EPI: 263
- 应助: 186 (高中生)
- 贵宾: 0.142
- 金币: 7889
- 散金: 576
- 红花: 51
- 帖子: 2095
- 在线: 402.1小时
- 虫号: 2260260
- 注册: 2013-01-25
- 专业: 催化化学
【答案】应助回帖
★ ★ ★ ★ ★ ★ ★ ★ ★ ★
柠檬树: 金币+10, 翻译EPI+1, ★★★★★最佳答案, 矮油,不错幺 2013-04-16 14:49:34
柠檬树: 金币+10, 翻译EPI+1, ★★★★★最佳答案, 矮油,不错幺 2013-04-16 14:49:34
|
不知道理解的对不对，你在进一步修改吧。这只是抛砖引玉： The properties of the insulating layers play an important role in the performance of many spin electronic devices. As an important insulating material for fabricating high-quality spintronic devices, MgO has been widely studied in basic spintronic research. Since the original demonstration by Parkin et al. 1 and Yuasa et al. 2 that the magnetic tunnel junctions (MTJs) composed of a MgO barrier layer on (in) ferromagnetic electrodes exhibits significantly high tunneling magnetoresistance (TMR) (Ref  , MgO layers have been applied in various kinds of spin related electronic devices to improve the performances, such as MTJs, metallic lateral spin valves3), abnormal Hall effect4), and anisotropic magnetoresistance (AMR) effect5). |
2楼2013-04-16 13:23:22
50