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小木虫论坛-学术科研互动平台» 学术交流区» 论文翻译 » 论文翻译求助完结子版 » 重开一贴,自我感觉翻译的较挫,求润色英文啊,谢谢
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sunliuqian

银虫 (小有名气)

[求助] 重开一贴,自我感觉翻译的较挫,求润色英文啊,谢谢

值得注意的是，在300℃退火后样品的Ni2p和B2p的XPS峰强度显著强于制备态和400退火的样品。通常，XPS峰的强度和探测到的光电子强度，即收集到的光电子数目有关,而收集到的光电子数量要受到表面粗糙度的影响。本实验中，制备态，300℃和400℃的样品的XPS实验是在同样的条件下测试的，样品的各层厚度一样，而且测得的Al2p的XPS峰的强度也基本相同，如图4。（d）所示。但是300退火后的样品的Ni2p和B2p的XPS峰强度明显强于制备态和400度的，这表明300度退火的样品的NiB/Al界面质量要优于制备态和400的退火的NiB/Al界面。
It is worth noting that, compared with the samples in the as-deposited state and after annealing at 400 °C, the Ni 2p and B 2p XPS intensities for the 300℃ annealed samples show significant increase. Generally, the XPS peak intensity is related to the detected photoelectron intensity, namely the number of photoelectrons collected, which is affected by surface roughness. In this experiment, the XPS studies were performed under the same conditions for the samples in  the as-deposited state and after annealing at 300 and 400 °C,with the same thickness of each layer in those samples. And the measured Al2p peak has the same intensity, as Figure 4 (d) shown below, but the Ni 2p and B 2p XPS intensities for the 300℃ annealed samples are much stronger than the samples in the as-grown state and after annealing at 400 °C, which indicates that the NiB/Al interface quality of 300 °C annealed samples is substantially superior to that of the preparation state and 400 annealed ones.

[ Last edited by sunliuqian on 2013-3-18 at 11:13 ]
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hookhans

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sunliuqian: 金币+20, 翻译EPI+1, ★★★★★最佳答案, 很感谢 2013-03-18 14:32:44
谨供参考：
It should mention that the intensities of the Ni2P and B2p XPS peaks of the sample annealed at 300C are much stronger than those of the as-prepared and 400C annealed samples. Usually,the intensities of the XPS peaks are related to  the detected photocurrent intensity, namely (i.e.,)  the amounts of the collected photoelectrons, which in turn are affacted by the roughness of the surface.  In our experiments, the XPS measurments for the as-prepared, 300C and 400C annealed samples were perfomed under the same experimental conditions with the same thicknesses. As shown in Fig 4(d), these three samples show almost all identical Al2p XPS peak intensities. However, the Ni2p and B2p XPS peak intensities are apparently much stronger for the samples annealed at 300C than those of the as-prepared and 400C annealed samples, which strongly suggests that the quality of the NiB/Al interface of the sample annealed at 300C is much better than that of the as-prepared and 400C annealed samples.
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where-there-is-a-will-there-is-a-way.
3楼2013-03-18 11:57:27
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crazyvolcano

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It is worth noting that, the XPS peaks of the Ni 2p and B 2p of the sample annealed at 300 °C are apparently more intense than that of the as-prepared one and the one which is annealed at 400 °C. Generally, the intensity of XPS peaks is related to the intensity of the detected photoelectrons-the number of collected photoelectrons, which is affected by the surface roughness. In this work, the XPS spectra of the as-prepared sample and the samples annealed at 300 °C and 400 °C were characterized under the same conditions. The thickness of each layer in these samples were equal, and the intensity of the Al2p peaks measured from the XPS spectra were alike, as shown in Figure 4 (d). However, the Ni 2p and B 2p XPS peaks of the samples annealed at 300°C are much stronger than that of the as-prepared ones and the ones annealed at 400 °C, which indicates that the properties of the NiB/Al interface of the samples annealed at 300 °C is substantially superior to that of the as-prepared and 400 °C-annealed ones.
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2楼2013-03-18 11:40:41
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