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sunliuqianÒø³æ (СÓÐÃûÆø)
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ÖµµÃ×¢ÒâµÄÊÇ£¬ÔÚ300¡æÍË»ðºóÑùÆ·µÄNi2pºÍB2pµÄXPS·åÇ¿¶ÈÏÔÖøÇ¿ÓÚÖÆ±¸Ì¬ºÍ400ÍË»ðµÄÑùÆ·¡£Í¨³££¬XPS·åµÄÇ¿¶ÈºÍ̽²âµ½µÄ¹âµç×ÓÇ¿¶È£¬¼´ÊÕ¼¯µ½µÄ¹âµç×ÓÊýÄ¿ÓйØ,¶øÊÕ¼¯µ½µÄ¹âµç×ÓÊýÁ¿ÒªÊܵ½±íÃæ´Ö²Ú¶ÈµÄÓ°Ïì¡£±¾ÊµÑéÖУ¬ÖƱ¸Ì¬£¬300¡æºÍ400¡æµÄÑùÆ·µÄXPSʵÑéÊÇÔÚͬÑùµÄÌõ¼þϲâÊԵģ¬ÑùÆ·µÄ¸÷²ãºñ¶ÈÒ»Ñù£¬¶øÇÒ²âµÃµÄAl2pµÄXPS·åµÄÇ¿¶ÈÒ²»ù±¾Ïàͬ£¬Èçͼ4¡££¨d£©Ëùʾ¡£µ«ÊÇ300ÍË»ðºóµÄÑùÆ·µÄNi2pºÍB2pµÄXPS·åÇ¿¶ÈÃ÷ÏÔÇ¿ÓÚÖÆ±¸Ì¬ºÍ400¶ÈµÄ£¬Õâ±íÃ÷300¶ÈÍË»ðµÄÑùÆ·µÄNiB/Al½çÃæÖÊÁ¿ÒªÓÅÓÚÖÆ±¸Ì¬ºÍ400µÄÍË»ðµÄNiB/Al½çÃæ¡£ It is worth noting that, compared with the samples in the as-deposited state and after annealing at 400 ¡ãC, the Ni 2p and B 2p XPS intensities for the 300¡æ annealed samples show significant increase. Generally, the XPS peak intensity is related to the detected photoelectron intensity, namely the number of photoelectrons collected, which is affected by surface roughness. In this experiment, the XPS studies were performed under the same conditions for the samples in the as-deposited state and after annealing at 300 and 400 ¡ãC,with the same thickness of each layer in those samples. And the measured Al2p peak has the same intensity, as Figure 4 (d) shown below, but the Ni 2p and B 2p XPS intensities for the 300¡æ annealed samples are much stronger than the samples in the as-grown state and after annealing at 400 ¡ãC, which indicates that the NiB/Al interface quality of 300 ¡ãC annealed samples is substantially superior to that of the preparation state and 400 annealed ones. [ Last edited by sunliuqian on 2013-3-18 at 11:13 ] |
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crazyvolcano
ÖÁ×ðľ³æ (Ö°Òµ×÷¼Ò)
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| It is worth noting that, the XPS peaks of the Ni 2p and B 2p of the sample annealed at 300 ¡ãC are apparently more intense than that of the as-prepared one and the one which is annealed at 400 ¡ãC. Generally, the intensity of XPS peaks is related to the intensity of the detected photoelectrons-the number of collected photoelectrons, which is affected by the surface roughness. In this work, the XPS spectra of the as-prepared sample and the samples annealed at 300 ¡ãC and 400 ¡ãC were characterized under the same conditions. The thickness of each layer in these samples were equal, and the intensity of the Al2p peaks measured from the XPS spectra were alike, as shown in Figure 4 (d). However, the Ni 2p and B 2p XPS peaks of the samples annealed at 300¡ãC are much stronger than that of the as-prepared ones and the ones annealed at 400 ¡ãC, which indicates that the properties of the NiB/Al interface of the samples annealed at 300 ¡ãC is substantially superior to that of the as-prepared and 400 ¡ãC-annealed ones. |
2Â¥2013-03-18 11:40:41
hookhans
Ìú¸Ëľ³æ (ÖøÃûдÊÖ)
Farmer
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sunliuqian: ½ð±Ò+20, ·ÒëEPI+1, ¡ï¡ï¡ï¡ï¡ï×î¼Ñ´ð°¸, ºÜ¸Ðл 2013-03-18 14:32:44
sunliuqian: ½ð±Ò+20, ·ÒëEPI+1, ¡ï¡ï¡ï¡ï¡ï×î¼Ñ´ð°¸, ºÜ¸Ðл 2013-03-18 14:32:44
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½÷¹©²Î¿¼£º It should mention that the intensities of the Ni2P and B2p XPS peaks of the sample annealed at 300C are much stronger than those of the as-prepared and 400C annealed samples. Usually,the intensities of the XPS peaks are related to the detected photocurrent intensity, namely (i.e.,) the amounts of the collected photoelectrons, which in turn are affacted by the roughness of the surface. In our experiments, the XPS measurments for the as-prepared, 300C and 400C annealed samples were perfomed under the same experimental conditions with the same thicknesses. As shown in Fig 4(d), these three samples show almost all identical Al2p XPS peak intensities. However, the Ni2p and B2p XPS peak intensities are apparently much stronger for the samples annealed at 300C than those of the as-prepared and 400C annealed samples, which strongly suggests that the quality of the NiB/Al interface of the sample annealed at 300C is much better than that of the as-prepared and 400C annealed samples. |

3Â¥2013-03-18 11:57:27














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