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1. The formed vacancy in the A layers will trap most of the incoming electrons incident to the BBB layers during their diffusion process, leading to a drastic increase in the C parameter. Concurrently, a drop in the D is obtained, as shown in Fig. 2. According to Refs.[15], inside the A layers, there exist significant amount of point defects such as Zn vacancies. µÚÒ»¾äÊÇÎÒµÄÎÄÕÂÄÚÈÝ£¬ÇóÖú´ó¼Ò°ïÎÒÈóÉ«ÈóÉ«¡£ µÚ¶þ¾äÊÇÎÒÒªÒýÓõÄÎÄÏ×£¬Ò»°ãÊDz»ÄÜÖ±½ÓÒýÓõģ¬ËùÒÔÏëÇë´ó¼Ò°ïæ¸Ä³ÆÎÒ¿ÉÒÔÒýÓõķÅÔÚÎÒµÄÎÄÕÂÀï¡£ |
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2Â¥2013-03-04 10:06:42
crazyvolcano
ÖÁ×ðľ³æ (Ö°Òµ×÷¼Ò)
- ·ÒëEPI: 8
- Ó¦Öú: 7 (Ó×¶ùÔ°)
- ½ð±Ò: 16893.3
- É¢½ð: 5248
- ºì»¨: 16
- Ìû×Ó: 3311
- ÔÚÏß: 1099.6Сʱ
- ³æºÅ: 1471634
- ×¢²á: 2011-11-01
- ÐÔ±ð: GG
- רҵ: °ëµ¼Ìå²ÄÁÏ
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phu_grassman: ½ð±Ò+2, thanks. 2013-03-04 18:16:45
ÄûÃÊÊ÷: ½ð±Ò+15, ·ÒëEPI+1, ¡ï¡ï¡ï¡ï¡ï×î¼Ñ´ð°¸, very good!thank you 2013-03-04 19:39:48
phu_grassman: ½ð±Ò+2, thanks. 2013-03-04 18:16:45
ÄûÃÊÊ÷: ½ð±Ò+15, ·ÒëEPI+1, ¡ï¡ï¡ï¡ï¡ï×î¼Ñ´ð°¸, very good!thank you 2013-03-04 19:39:48
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1. The vacancies formed in the A layers will seize most of the incident electrons in the BBB layers during their diffusion process, facilitating a drastic increase in the parameter C whereas a drop in the parameter D, as shown in Fig. 2. As reported in Ref. [15], there is a large amount of point defects such as Zn vacancies inside the A layers. |
3Â¥2013-03-04 11:20:00














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