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chlfu木虫 (正式写手)
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[求助]
求50702036摘要
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zuozhijun5134
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2楼2013-01-24 09:32:03
wxiaoqiang
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chlfu: 金币+60, 基金HEPI+1, ★★★很有帮助 2013-07-28 09:24:46
chlfu: 金币+60, 基金HEPI+1, ★★★很有帮助 2013-07-28 09:24:46
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中文摘要： 在本项目的资助下，我们通过研究BNT、PZT和BFO等铁电薄膜的光电流，着重研究剩余极化、空间电荷、界面结构和肖特基势垒对铁电薄膜光电流的影响。通过不同厚度PZT薄膜光电流的研究，将剩余极化和界面肖特基接触对光电流的贡献区分开来，指出了肖特基接触在铁电薄膜光电流中的重要地位；通过对比研究BNT和PZT铁电薄膜的光电流，指出了薄膜表面形貌对肖特基势垒的重要影响；通过控制PZT薄膜上界面层的厚度，澄清了肖特基接触产生的光电流不仅仅取决于肖特基势垒的大小，还反比于该势垒所在的界面层厚度；通过不同退火温度、气氛控制铁电薄膜内空间电荷密度，发现高温或氧气氛下退火的样品具有较大的剩余极化和下界面肖特基势垒，从而产生较大的光电流，空间电荷对光电流的影响机制还需要进一步研究；通过BNT薄膜光电流的研究，阐明了铁电薄膜剩余极化机制主要是来自于极化的排列取向而在薄膜内部形成的退极化场，而不是由于极化束缚电荷出现在上、下界面而打破上、下界面肖特基势垒的平衡。在上述研究工作的基础上，提出了铁电薄膜光电流机制和模型，致力于提高铁电薄膜的光电流，为进一步研究铁电薄膜个光伏效应及其应用打下良好的基础。 中文主题词： 铁电薄膜，光电流，剩余极化，肖特基势垒，界面结构 英文摘要: Under the aiding of the project, we researched the effect of remnant polarization, space charge, interface structure, and Schottky barrier on the photocurrent of ferroelectric materials, such as BNT, PZT, and BFO films. We suggested that the Schottky effect on the photocurrent was dominated in PZT ferroelectric films when the polarization contribution for the photocurrent and the Schottky one were separated. Comparing the photocurrent of BNT and PZT films, we found the film's surface pattern had the important effect on the Schottky barrier. Controlling the top interface thickness by the method of annealing, we found that the photocurrent due to the Schottky barrier is determined not only by the height of barrier but also by the interface layer thickness. We fabricated the ferroelectric films annealed under different temperature and atmosphere in order to control the amount of space charge. As a result, we found that the samples having larger polarization and bottom interface Schottky barrier were the ones which were annealed in higher temperature and O2 atmospheres. The mechanism of the space charge effect on the photocurrent is still ambiguous and need to be researched further. On the base of the photocurrent of BNT films, we cleared that the polarization effect on the photocurrent is not due to the destruction of the symmetry between the top Schottky barrier and the bottom one attribute to the present of polarization bound charge at the top or bottom interface, but the depolarization field in the film attribute to the alignment of the dipoles. Basing the above works, we brought forward the model and mechanism of the ferroelectric film photocurrent and did our endeavor to enhance the photocurrent of the ferroelectric in order that the researcher and application of the ferroelectric photovoltaic had a well beginning. 英文主题词： Ferroelectric; photocurrent; remanant; Schottky barrier; Interface structure. |
3楼2013-04-23 21:54:19
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