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Ó¢ÎÄÕªÒª: Under the aiding of the project, we researched the effect of remnant polarization, space charge, interface structure, and Schottky barrier on the photocurrent of ferroelectric materials, such as BNT, PZT, and BFO films. We suggested that the Schottky effect on the photocurrent was dominated in PZT ferroelectric films when the polarization contribution for the photocurrent and the Schottky one were separated. Comparing the photocurrent of BNT and PZT films, we found the film's surface pattern had the important effect on the Schottky barrier. Controlling the top interface thickness by the method of annealing, we found that the photocurrent due to the Schottky barrier is determined not only by the height of barrier but also by the interface layer thickness. We fabricated the ferroelectric films annealed under different temperature and atmosphere in order to control the amount of space charge. As a result, we found that the samples having larger polarization and bottom interface Schottky barrier were the ones which were annealed in higher temperature and O2 atmospheres. The mechanism of the space charge effect on the photocurrent is still ambiguous and need to be researched further. On the base of the photocurrent of BNT films, we cleared that the polarization effect on the photocurrent is not due to the destruction of the symmetry between the top Schottky barrier and the bottom one attribute to the present of polarization bound charge at the top or bottom interface, but the depolarization field in the film attribute to the alignment of the dipoles. Basing the above works, we brought forward the model and mechanism of the ferroelectric film photocurrent and did our endeavor to enhance the photocurrent of the ferroelectric in order that the researcher and application of the ferroelectric photovoltaic had a well beginning.
Ó¢ÎÄÖ÷Ìâ´Ê£º Ferroelectric; photocurrent; remanant; Schottky barrier; Interface structure.
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