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| 本帖产生 1 个 翻译EPI ，点击这里进行查看 | |||
livesun木虫 (小有名气)
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[求助]
求翻译下面一段，翻译成英语。
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| 一般认为，晶体管器件中绝缘层的表面粗糙程度是衡量器件性能，即载流子迁移率大小的一个重要指标。绝缘层的表面光滑, 平整度好, 则绝缘膜中的表面缺陷如针孔和陷阱就少，便于载流子的通过；反之，载流子会被绝缘膜中的表面缺陷所捕获，从而降低器件的迁移率， 这与载流子迁移率的测定结果相一致。一方面A 溶液处理后改变了绝缘层表面蒸镀酞菁铜层的膜的生长性质，由于可以使B薄膜的表面变成更加疏水的状态，降低了表面自由能，从而更有利于酞菁铜薄膜在基片上的吸附；其次是A溶液处理后为绝缘层提供了更为平滑的表面，降低了位于介面处的缺陷浓度，从而优化了薄膜的生长行为，使介面处酞菁铜分子排列更为有序，进而提高了场效应迁移率，这使A溶液处理的晶体管器件性能得以提高。 |
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四月闻莺
木虫 (著名写手)
Life is translation
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【答案】应助回帖
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Carena: 金币+3, 很不错，感谢应助 2013-01-22 22:36:11
livesun: 金币+42, 翻译EPI+1, ★有帮助 2013-01-23 12:53:20
Carena: 金币+3, 很不错，感谢应助 2013-01-22 22:36:11
livesun: 金币+42, 翻译EPI+1, ★有帮助 2013-01-23 12:53:20
| Generally speaking, the surface roughness of the insulating layer in a transistor device is an important index in measuring the performance of the device, which is the carrier mobility. Smooth and flat surface of the insulating layer indicates fewer defects such as pinholes and traps in the insulating film, and thus it’s easier for carriers to go through; otherwise, the carriers will be caught by superficial defects of the insulating film and the migration rate of the device will be reduced. So the migration rate of the device and that of the carriers are consistent. On the one hand, the growing property of evaporation CuPc film on the insulating surface was changed after solution A is treated, which makes the surface of B film more hydrophobic and reduces surface free energy, thus more conducive to the adsorption of CuPc film onto the base tag. On the other hand, the treated A solution provides a more smooth surface for the insulating layer and reduces the defect density at the interface, thus optimizes the growth of the film, and the arrangement of CuPc molecules at the interface is much more in order and the field effect migration rate is hence improved, which enhances the performance of the transistor device. |
2楼2013-01-22 18:39:07
nwsuafliu
木虫 (著名写手)
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【答案】应助回帖
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livesun: 金币+43, ★有帮助 2013-01-23 12:53:35
livesun: 金币+43, ★有帮助 2013-01-23 12:53:35
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润色了一遍，如下： Surface roughness of the insulating layer in a transistor device is generally considered as an important parameter in the evaluation of the device performance, which is defined as the carrier mobility. Smooth and flat surface of the insulating layer indicates fewer surface defects such as pinholes and traps in the insulating film and is better passed through by the carriers; otherwise, the carriers will be caught by surface defects of the insulation film and hence reduces the device mobility, which is in agreement with the measurement of carrier mobility. On the one hand, the growth properties of evaporated copper phthalocyanine (CuPc) film on the insulation surface were altered after solution A treatment, which increased the surface hydrophobility of B film and reduced surface free energy, thereby facilitating the adsorption of CuPc film onto the chip. On the other hand, the treatment with solution A provides a more smooth surface for the insulating layer and reduces the interfacial defect concentration, thus optimizing the growth behavior of the film and generating more ordered arrangement of CuPc molecules at the interface. As a result, the field effect migration rate is increased, which improved the performance of the A solution-treated transistor device. |
3楼2013-01-23 10:53:31