木虫 (著名写手)
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【答案】应助回帖
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Carena: 金币+3, 很不错，感谢应助 2013-01-22 22:36:11
livesun: 金币+42, 翻译EPI+1, ★有帮助 2013-01-23 12:53:20
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Generally speaking, the surface roughness of the insulating layer in a transistor device is an important index in measuring the performance of the device, which is the carrier mobility. Smooth and flat surface of the insulating layer indicates fewer defects such as pinholes and traps in the insulating film, and thus it’s easier for carriers to go through; otherwise, the carriers will be caught by superficial defects of the insulating film and the migration rate of the device will be reduced. So the migration rate of the device and that of the carriers are consistent. On the one hand, the growing property of evaporation CuPc film on the insulating surface was changed after solution A is treated, which makes the surface of B film more hydrophobic and reduces surface free energy, thus more conducive to the adsorption of CuPc film onto the base tag. On the other hand, the treated A solution provides a more smooth surface for the insulating layer and reduces the defect density at the interface, thus optimizes the growth of the film, and the arrangement of CuPc molecules at the interface is much more in order and the field effect migration rate is hence improved, which enhances the performance of the transistor device. |
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