| 查看: 446 | 回复: 2 | |||
[求助]
帮忙修改英文摘要，谢谢
|
| In this paper, strain in GaN epitaxial layer grown by hydride vapor phase epitaxy (HVPE) had been investigated by means of high-resolution x-ray diffraction (HRXRD), Raman spectra and Photoluminescence (PL) measurements. Both the biaxial in-plane and out-of-plane strains (of the order of −10−4 and 10−4, respectively) and the hydrostatic strain component (of the order of −10−5) were extracted from HRXRD method. These values agreed well with the ones computed from the blue-shift of E2 Raman mode and the near-band-edge PL peak. The results showed that strains in GaN layer were superposed by the biaxial strain and hydrostatic strain. |
回复此楼» 猜你喜欢
一志愿北京化工大学材料与化工（085600）296求调剂
已经有23人回复
-
08工科，295，接受跨专业调剂
已经有3人回复
-
材料学硕333求调剂
已经有12人回复
-
334分 一志愿武理 材料求调剂
已经有16人回复
-
0703化学321分求调剂
已经有9人回复
-
材料专硕 085600求调剂
已经有7人回复
-
297求调剂
已经有15人回复
-
11408总分309，一志愿东南大学求调剂，不挑专业
已经有5人回复
-
求调剂
已经有9人回复
-
化工专硕求调剂
已经有4人回复
qfzcom
铁杆木虫 (著名写手)
- 翻译EPI: 40
- 应助: 34 (小学生)
- 贵宾: 0.062
- 金币: 4748.6
- 散金: 56
- 红花: 8
- 沙发: 11
- 帖子: 2122
- 在线: 207.6小时
- 虫号: 2081714
- 注册: 2012-10-23
- 专业: 环境工程
【答案】应助回帖
★ ★ ★ ★ ★ ★
phu_grassman: 金币+1, thanks 2013-01-11 12:48:40
sltmac: 金币+5 2013-03-12 13:25:39
phu_grassman: 金币+1, thanks 2013-01-11 12:48:40
sltmac: 金币+5 2013-03-12 13:25:39
|
In this paper strain in GaN epitaxial layer grown by hydride vapor phase epitaxy (HVPE) had been investigated by means of high-resolution x-ray diffraction (HRXRD), Raman spectra and Photoluminescence (PL) measurements. Both the biaxial in-plane and out-of-plane strains (of the order of −10−4 and 10−4, respectively) and the hydrostatic strain component (of the order of −10−5) were extracted from HRXRD method. These values agreed well with the ones computed from the blue-shift of E2 Raman mode and the near-band-edge PL peak. The results showed that strains in GaN layer were superposed by the biaxial strain and hydrostatic strain. 翻译的很好啊，没有什么错误。由于专业不同，只能帮你看看基本的语法。 |
2楼2013-01-10 20:53:25
zxyan
至尊木虫 (文坛精英)
- 应助: 56 (初中生)
- 金币: 21128.1
- 散金: 2151
- 红花: 6
- 沙发: 2
- 帖子: 18284
- 在线: 881.4小时
- 虫号: 818017
- 注册: 2009-07-29
- 专业: 燃烧学
【答案】应助回帖
★ ★ ★ ★ ★ ★
phu_grassman: 金币+1, thanks 2013-01-11 12:49:19
sltmac: 金币+5 2013-03-12 13:25:44
phu_grassman: 金币+1, thanks 2013-01-11 12:49:19
sltmac: 金币+5 2013-03-12 13:25:44
| In this paper, strain in GaN epitaxial layer grown by hydride vapor phase epitaxy (HVPE) was experimentelly investigated by high-resolution x-ray diffraction (HRXRD), Raman spectra and Photoluminescence (PL) measurements. Both the biaxial in-plane and out-of-plane strains (of the order of −10−4 and 10−4, respectively) and the hydrostatic strain component (of the order of −10−5) were extracted by HRXRD method. These values agreed well with the ones computed from the blue-shift of E2 Raman mode and the near-band-edge PL peak. The results showed that strains in GaN layer were superposed by the biaxial strain and hydrostatic strain. |
3楼2013-01-10 21:36:53
