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[求助]
帮忙修改英文摘要，谢谢
|
| In this paper, strain in GaN epitaxial layer grown by hydride vapor phase epitaxy (HVPE) had been investigated by means of high-resolution x-ray diffraction (HRXRD), Raman spectra and Photoluminescence (PL) measurements. Both the biaxial in-plane and out-of-plane strains (of the order of −10−4 and 10−4, respectively) and the hydrostatic strain component (of the order of −10−5) were extracted from HRXRD method. These values agreed well with the ones computed from the blue-shift of E2 Raman mode and the near-band-edge PL peak. The results showed that strains in GaN layer were superposed by the biaxial strain and hydrostatic strain. |
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铁杆木虫 (著名写手)
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phu_grassman: 金币+1, thanks 2013-01-11 12:48:40
sltmac: 金币+5 2013-03-12 13:25:39
phu_grassman: 金币+1, thanks 2013-01-11 12:48:40
sltmac: 金币+5 2013-03-12 13:25:39
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In this paper strain in GaN epitaxial layer grown by hydride vapor phase epitaxy (HVPE) had been investigated by means of high-resolution x-ray diffraction (HRXRD), Raman spectra and Photoluminescence (PL) measurements. Both the biaxial in-plane and out-of-plane strains (of the order of −10−4 and 10−4, respectively) and the hydrostatic strain component (of the order of −10−5) were extracted from HRXRD method. These values agreed well with the ones computed from the blue-shift of E2 Raman mode and the near-band-edge PL peak. The results showed that strains in GaN layer were superposed by the biaxial strain and hydrostatic strain. 翻译的很好啊，没有什么错误。由于专业不同，只能帮你看看基本的语法。 |
2楼2013-01-10 20:53:25
zxyan
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phu_grassman: 金币+1, thanks 2013-01-11 12:49:19
sltmac: 金币+5 2013-03-12 13:25:44
phu_grassman: 金币+1, thanks 2013-01-11 12:49:19
sltmac: 金币+5 2013-03-12 13:25:44
| In this paper, strain in GaN epitaxial layer grown by hydride vapor phase epitaxy (HVPE) was experimentelly investigated by high-resolution x-ray diffraction (HRXRD), Raman spectra and Photoluminescence (PL) measurements. Both the biaxial in-plane and out-of-plane strains (of the order of −10−4 and 10−4, respectively) and the hydrostatic strain component (of the order of −10−5) were extracted by HRXRD method. These values agreed well with the ones computed from the blue-shift of E2 Raman mode and the near-band-edge PL peak. The results showed that strains in GaN layer were superposed by the biaxial strain and hydrostatic strain. |
3楼2013-01-10 21:36:53