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mapleer

木虫 (小有名气)

[求助] 帮忙修改英文摘要,谢谢

In this paper, strain in GaN epitaxial layer grown by hydride vapor phase epitaxy (HVPE) had been investigated by means of high-resolution x-ray diffraction (HRXRD), Raman spectra and Photoluminescence (PL) measurements. Both the biaxial in-plane and out-of-plane strains (of the order of −10−4 and 10−4, respectively) and the hydrostatic strain component (of the order of −10−5) were extracted from HRXRD method. These values agreed well with the ones computed from the blue-shift of E2 Raman mode and the near-band-edge PL peak. The results showed that strains in GaN layer were superposed by the biaxial strain and hydrostatic strain.
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qfzcom

铁杆木虫 (著名写手)

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phu_grassman: 金币+1, thanks 2013-01-11 12:48:40
sltmac: 金币+5 2013-03-12 13:25:39
In this paper strain in GaN epitaxial layer grown by hydride vapor phase epitaxy (HVPE) had been investigated by means of high-resolution x-ray diffraction (HRXRD), Raman spectra and Photoluminescence (PL) measurements. Both the biaxial in-plane and out-of-plane strains (of the order of −10−4 and 10−4, respectively) and the hydrostatic strain component (of the order of −10−5) were extracted from HRXRD method. These values agreed well with the ones computed from the blue-shift of E2 Raman mode and the near-band-edge PL peak. The results showed that strains in GaN layer were superposed by the biaxial strain and hydrostatic strain.
翻译的很好啊,没有什么错误。由于专业不同,只能帮你看看基本的语法。
2楼2013-01-10 20:53:25
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zxyan

至尊木虫 (文坛精英)

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phu_grassman: 金币+1, thanks 2013-01-11 12:49:19
sltmac: 金币+5 2013-03-12 13:25:44
In this paper, strain in GaN epitaxial layer grown by hydride vapor phase epitaxy (HVPE) was experimentelly investigated by high-resolution x-ray diffraction (HRXRD), Raman spectra and Photoluminescence (PL) measurements. Both the biaxial in-plane and out-of-plane strains (of the order of −10−4 and 10−4, respectively) and the hydrostatic strain component (of the order of −10−5) were extracted by HRXRD method. These values agreed well with the ones computed from the blue-shift of E2 Raman mode and the near-band-edge PL peak. The results showed that strains in GaN layer were superposed by the biaxial strain and hydrostatic strain.
3楼2013-01-10 21:36:53
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