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shuihuo2012

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[资源] 边界形貌对GQD电性能的影响

Grapheneshowspromiseasafuturematerialfornanoelectronicsowingtoitscompatibilitywithindustrystandardlithographicprocessing,electronmobilitiesupto150timesgreaterthanSiandathermalconductivitytwicethatofdiamond.Theelectronicstructure of graphene nanoribbons (GNRs) and quantum dots (GQDs) has been predicted to depend sensitivelyonthecrystallographicorientationoftheiredges;however,theinfluenceofedgestructurehasnotbeenverifiedexperimentally.Here,weusetunnellingspectroscopytoshowthattheelectronicstructureofGNRsandGQDswith2–20nmlateraldimensionsvarieson the basis of the graphene edge lattice symmetry. Predominantly zigzag-edge GQDs with 7–8nm average dimensions aremetallic owing to the presence of zigzag edge states. GNRwithahigherfractionofzigzagedgesexhibitasmallerenergygapthanapredominantlyarmchairedgeribbonofsimilarwidth,andthemagnitudesofthemeasuredGNRenergygapsagreewithrecent theoretical calculations.
本文主要讲解了GQD和石墨烯纳米条带的尺寸及边界形貌对电性能的影响。

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附件 1 : Theinfluenceofedgestructureontheelectronic.pdf

2012-12-03 14:02:07, 1.52 M