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first solution positive mask, negetive resist 1. Wafer baking, 180/10min 2. LOR 3A spinning 3000rpm, 180/5min 3. nLof 2020 spinning, 3000rpm, 110/1min30s 4. Mask align1, 3S 5. Post baking, 110/1min 6. Development , MIF 326/40s 7. Lift-off, EPR PG at room temperature Second solution EBL 1. e-beam-Lithographie - 2-Lagen-PMMA Vorbehandlung Belacken Ausheizen Plasma Heizplatte RR-Bereich Lack Drehz [U/min] Dicke [nm] Heizplatte Temp [¡ãC] Zeit 190¡ãC/5' AR-P649.04 4000 150 set190 2' Belacken Ausheizen RR-Bereich Lack Drehz [U/min] Dicke [nm] Heizplatte Temp [¡ãC] Zeit AR-P669.04 4000 220 set 180 2' Belichtung Entwicklung Stop Tempern Belichter dose E [mW] Kontaktart Entwickler Zeit Medium Zeit e-beam 250 µC/cm2 -- -- AR 600-55 2 '/Megas. Isopropanol 5' -- |
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