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¾Ù¸öÀý×Ó£¬Ä±ÆªÎÄÏ׸ø³ö²Î¿¼ÎÄÏ×£ºM. Micovic et al., ¡°GaN double heterojunctionfield effect transistor for microwave and millimeterwave power applications,¡± in IEDM Tech. Dig. , San Francisco, Dec. 13 ¨C15, 2004, pp. 807¨C810. ÁíһƪÎÄÏ×Ò²¸ø³ö²Î¿¼ÎÄÏ×£¬¸úÉÏÃæµÄÆäʵÊÇһƪ£ºMicovic, M., et al.: ¡®GaN double heterojunction field effect transistor¡¯, IEEE IEDM Tech. Dig., 2004, pp. 807¨C810 µ«ÊÇÔÚÍøÉÏÕÒ¸ù±¾ÕÒ²»µ½£¬ËÑË÷²»µ½°¡£¡ÓôÃÆ~ |
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