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xiejf专家顾问 (文学泰斗)
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[资源]
Nature最新研究进展：石墨烯-氮化硼平面异质结构用作原子层厚度的电路
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8月30日更新的Nature杂志刊发了康奈尔大学的研究成果，文章报导了通过平面生长原子层厚度的石墨烯和氮化硼的异质结构，实现了原子层厚度的电路。现上传正文和文章的支持信息与大家分享。 摘要： Precise spatial control over the electrical properties of thin films is the key capability enabling the production of modern integrated circuitry. Although recent advances in chemical vapour deposition methods have enabled the large-scale production of both intrinsic and doped graphene, aswell as hexagonal boron nitride (h-BN), controlled fabrication of lateral heterostructures in these truly atomically thin systems has not been achieved. Graphene/h-BN interfaces are of particular interest, because it is known that areas of different atomic compositions may coexist within continuous atomically thin films and that, with proper control, the bandgap and magnetic properties can be precisely engineered. However, previously reported approaches for controlling these interfaces have fundamental limitations and cannot be easily integrated with conventional lithography. Here we report a versatile and scalable process, which we call ‘patterned regrowth’, that allows for the spatially controlled synthesis of lateral junctions between electrically conductive graphene and insulating h-BN, as well as between intrinsic and substitutionally doped graphene.We demonstrate that the resulting films formmechanically continuous sheets across these heterojunctions. Conductance measurements confirm laterally insulating behaviour forh-BN regions, while the electrical behaviour of both doped and undoped graphene sheets maintain excellent properties, with low sheet resistances and high carrier mobilities. Our results represent an important step towards developing atomically thin integrated circuitry and enable the fabrication of electrically isolated active and passive elements embedded in continuous, one-atom-thick sheets, which could be manipulated and stacked to form complex devices at the ultimate thickness limit. 。  Graphene and boron nitride lateral heterostructures for atomically thin circuitry.jpg [ 来自科研家族 材料家族 ]  nature11408-f1.2.jpg  nature11408-f2.2.jpg  nature11408-f3.2.jpg  nature11408-f4.2.jpg  nature11408-f5.2.jpg [ Last edited by xiejf on 2012-8-30 at 08:31 ] |
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11楼2012-08-30 14:16:18
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2012-08-30 09:10
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2012-08-30 11:14
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2012-08-30 11:21
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2012-08-30 11:54
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2012-08-30 12:01
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2012-08-30 14:05
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2012-08-30 14:24
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