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【答案】应助回帖
jxlcwy(金币+20, 翻译EPI+1): ★★★★★最佳答案 2012-02-22 14:21:06
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From each specimen impedance spectrum analysis spectrum (Figure 5) can be seen, the complex impedance spectra of various samples within the range of the test frequency of 20 kHz to 1 MHz broadband , there are two semi-circular arc , and with the SiO2 content increases, moving the location of each sample semi- circular arc in turn significantly to the increase in electrical resistance , and its radius corresponding increases accordingly you can infer that the grain boundary resistance significantly increased with the increase of SiO2 content .It can be seen from within the illustration in Figure 5 , when to extend the high frequency end of the corresponding semi- circular arc with the Z ' axis intersect each intersection will be gathered in much the same position , which can infer the grain of each specimen resistance little change.Therefore, the dielectric loss of SiO2 in ceramic internal grain boundary resistance increases and improved due to the insulation between the CCTO ceramic internal grain . |
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