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jiayou201101金虫 (著名写手)
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[求助]
请帮忙翻译一句话，谢谢！！！
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请帮忙把下面一句话翻译成英文，谢谢！！（相关术语已放在下面）： 值得一提的是，在Hf的浓度达到8mol%时，抗光散射能力均有一定程度的减弱，对这个现象，我们认为，在晶体中高掺杂Hf4+时，会有过多的Hf4+开始占据正常的Li位，晶体内部出现新的缺陷锂空位( )，由于锂空位( )的增加，导致晶体的抗光散射能力减弱。 （专业术语的翻译附上： 晶体：crystals，抗光散射能力：resistance to light-induced scattering，缺陷：defect，浓度：concentration ，锂空位缺陷：Li vacancy defects） |
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【答案】应助回帖
jiayou201101(金币+10): ★★★★★最佳答案 比你早一些有朋友帮忙翻译，分给你10个吧，新年快乐 2012-01-26 17:56:35
| It is noticed that there is a certain degree of weakening of the resistance to light-induced scattering when the concentration of Hf reaches 8 mol% . This phenomenon may due to the over supplied Hf4+ begin to take the normal Li position in the crystals with highly dosed Hf4+ and form novel Li vacancy defects () within the crystals. As the number of the Li vacancy defects increases, the resistance to light-induced scattering of the crystals decreased accordingly. |
3楼2012-01-26 11:08:17
zhaoqinglu05
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【答案】应助回帖
jiayou201101(金币+30, 翻译EPI+1): ★★★★★最佳答案 下面还有个朋友帮忙翻译，分给他10个吧，谢谢你新年快乐 2012-01-26 17:56:08
我的翻译如下，应该对你有所帮助. It is to note that there is a certain degree of weakening of all the resistance to light-induced scattering with the concentration of 8mol% of Hf. This phenomenon make us think that there will be too much Hf4+ begin to take normal the Li position in the crystals with highly doped Hf4+. In addition, novel Li vacancy defects () can be found within the crystals, and as the number of the Li vacancy defects increases, the resistance to light-induced scattering of the crystals decreased accordingly. |
2楼2012-01-26 10:00:18
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