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jiayou201101(½ð±Ò+30, ·ÒëEPI+1): ¡ï¡ï¡ï¡ï¡ï×î¼Ñ´ð°¸ ÏÂÃæ»¹ÓиöÅóÓѰïæ·Ò룬·Ö¸øËû10¸ö°É£¬Ð»Ð»ÄãÐÂÄê¿ìÀÖ 2012-01-26 17:56:08
ÎҵķÒëÈçÏ£¬Ó¦¸Ã¶ÔÄãÓÐËù°ïÖú.![]() It is to note that there is a certain degree of weakening of all the resistance to light-induced scattering with the concentration of 8mol% of Hf. This phenomenon make us think that there will be too much Hf4+ begin to take normal the Li position in the crystals with highly doped Hf4+. In addition, novel Li vacancy defects () can be found within the crystals, and as the number of the Li vacancy defects increases, the resistance to light-induced scattering of the crystals decreased accordingly. |
2Â¥2012-01-26 10:00:18
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jiayou201101(½ð±Ò+10): ¡ï¡ï¡ï¡ï¡ï×î¼Ñ´ð°¸ ±ÈÄãÔçһЩÓÐÅóÓѰïæ·Ò룬·Ö¸øÄã10¸ö°É£¬ÐÂÄê¿ìÀÖ 2012-01-26 17:56:35
| It is noticed that there is a certain degree of weakening of the resistance to light-induced scattering when the concentration of Hf reaches 8 mol% . This phenomenon may due to the over supplied Hf4+ begin to take the normal Li position in the crystals with highly dosed Hf4+ and form novel Li vacancy defects () within the crystals. As the number of the Li vacancy defects increases, the resistance to light-induced scattering of the crystals decreased accordingly. |

3Â¥2012-01-26 11:08:17









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