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gmy1990荣誉版主 (著名写手)
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急救啊！生物传感器--翻译
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single layer graphene flakes were transferred to the surface of an oxidized Si substrate using mechanical exfoliation,source/drain contacts were then defined by electron beam lithography (EBL) followed by Cr/Au/Cr metallization, and then the contacts were passivated using SiO2.SiNW-FETs were defined close to Gra-FET devices in a second round of fabrication. Specifically, 30 nm diameter p-type SiNWs were deposited from ethanol solution onto the chip with Gra-FET devices, and then EBL and metallization steps were carried out to define source/drain electrodes.Last, the substrate chip was coated with a poly(methyl methacrylate) passiva-tion layer, and 50 µm × 50 µm windows were defined to expose the Gra- and NW-FET devices. Gra- and SiNW-FET device chips were interfaced with embryonic chicken cardiomyocytes as shown schematically in Figure 1B. Nanodevice cardiomyocyte interfaces weremade in a flexiblemanner using our recently reported scheme: First,embryonic chicken cardiomyocytes were cultured under optimized conditions on thin poly(dimethylsiloxane) (PDMS) sheets;second, a PDMS/cardiomyocyte substrate was transferred into a well, which contains extracellular medium, over the Gra-FET and SiNW-FET chip; third, the PDMS/cardiomyocyte cell substrates were positioned using a x-y-z manipulator under an optical microscope to bring spontaneously beating cells into direct contact with devices (Figure 1B). 麻烦哪位大侠帮忙翻译一下啊 ！不要机译啊！非常感谢 |
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xiaohanhan2007 
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gmy1990(金币+80, 翻译EPI+1): 2011-12-31 22:22:16
| 将单层石墨薄片通过机械剥离转移到氧化硅衬底表面，并对源/漏接点进行电子束光刻（EBL）修边和Cr/Au/Cr金属化，接着将这些接点使用SiO2进行钝化。之后对SiNW-FETs进行的第二轮加工与GRA-FET加工方法相似。具体来说，将直径30 nm的p-型SiNWs从乙醇溶液中沉积到连有通过Gra-FET器件的芯片上，接着对源/漏电极使用EBL和金属化修边。最后，将衬底芯片涂上聚（甲基丙烯酸甲酯）钝化层，并切出50微米× 50 微米的窗口以便露出Gra和NW-FET器件。如图1B所示，将Gra和NW-FET器件芯片连接胚胎鸡心肌细胞。纳米器件心肌细胞连接体可按照我们近期报道的方法灵活制得：首先，将胚胎鸡心肌细胞在优化条件下在聚二甲基硅氧烷（PDMS）薄片表面进行培养；第二步，将一个PDMS/心肌细胞基底转移到含有胞外液的槽中，并置于Gra-FET和SiNWet-FET芯片之上；第三步，将这一PDMS/心肌细胞基底通过x-y-x探针座置于光学显微镜下，并将自发性搏动细胞与器件直接进行接触。 |
2楼2011-12-31 21:51:25
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