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mlg186金虫 (正式写手)
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[求助]
谁能不能帮我把下面的文章检索一下 啊。
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Microstructures and Optical Absorption of Ti-doped ZnO Films，Haixia Chen, Shuyi Ma*, Yingfeng Li, Ligang Ma, and Xingli Huang 谢谢大家， 是EI检索， [ Last edited by seapass on 2011-12-15 at 19:54 ] |
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八戒的小弟
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【答案】应助回帖
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mlg186(金币+5): xiexie 2011-12-15 19:24:34
mlg186(金币+5): xiexie 2011-12-15 19:24:34
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Chen, Haixia; Ma, Shuyi; Li, Yingfeng; Ma, Ligang; Huang, Xingli; College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou, China This paper appears in: Electronics, Communications and Control (ICECC), 2011 International Conference on Issue Date: 9-11 Sept. 2011 On page(s): 906 - 909 Location: Ningbo, China Print ISBN: 978-1-4577-0320-1 Digital Object Identifier: 10.1109/ICECC.2011.6066349 Date of Current Version: 03 å一月 2011 |
2楼2011-12-15 14:46:27
shy2400
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楼上的给的不详细，再给你一份吧 Accession number: 20114714544633 Title: Microstructures and optical absorption of Ti-doped ZnO films Authors: Chen, Haixia1 ; Ma, Shuyi1 ; Li, Yingfeng1 ; Ma, Ligang1 ; Huang, Xingli1 Author affiliation: 1 College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou, China Corresponding author: Ma, S. (syma@nwnu.edu.cn) Source title: 2011 International Conference on Electronics, Communications and Control, ICECC 2011 - Proceedings Abbreviated source title: Int. Conf. Electron., Commun. Control, ICECC - Proc. Monograph title: 2011 International Conference on Electronics, Communications and Control, ICECC 2011 - Proceedings Issue date: 2011 Publication year: 2011 Pages: 906-909 Article number: 6066349 Language: English ISBN-13: 9781457703218 Document type: Conference article (CA) Conference name: 2011 International Conference on Electronics, Communications and Control, ICECC 2011 Conference date: September 9, 2011 - September 11, 2011 Conference location: Ningbo, China Conference code: 87394 Sponsor: Ningbo University Publisher: IEEE Computer Society, 445 Hoes Lane - P.O.Box 1331, Piscataway, NJ 08855-1331, United States Abstract: Undoped and Ti-doped ZnO films were deposited using radio frequency reactive magnetron sputtering at various sputtering powers. The crystal structures, surface morphology, chemical state of titanium, zinc, and oxygen and optical properties in Ti-doped ZnO films were systematically investigated via X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and ultraviolet visible (UV-Vis)spectrophotometer. ZnO films showed a stronger preferred orientation toward c-axis and became smoother after Ti doping. The intensity of Ti-doped ZnO (002) peak further increased and surface showed more lattice defects as sputtering power increased from 100 W to 150 W. The XPS spectrum confirmed that Zn exists only in the oxidized state and the sample is a mixture of ZnO and TiO2. In addition, the UV absorption edge of ZnO films shifted to a longer wavelength as sputtering power increased. © 2011 IEEE. Number of references: 16 Main heading: Zinc oxide Controlled terms: Atomic force microscopy - Atomic spectroscopy - Crystal atomic structure - Light absorption - Magnetron sputtering - Metallic films - Microstructure - Optical properties - Semiconductor doping - Surface defects - Titanium - Titanium dioxide - X ray diffraction - X ray diffraction analysis - X ray photoelectron spectroscopy - Zinc Uncontrolled terms: Chemical state - Oxidized state - Preferred orientations - Radio frequency reactive magnetron sputtering - Sputtering power - Ti doping - TiO - UV absorption - XPS spectra - ZnO - ZnO films Classification code: 951 Materials Science - 741.1 Light/Optics - 741.3 Optical Devices and Systems - 801 Chemistry - 804.2 Inorganic Compounds - 933 Solid State Physics - 933.1.1 Crystal Lattice - 714.2 Semiconductor Devices and Integrated Circuits - 542.3 Titanium and Alloys - 539.3 Metal Plating - 539 Metals Corrosion and Protection; Metal Plating - 531 Metallurgy and Metallography - 421 Strength of Building Materials; Mechanical Properties - 546.3 Zinc and Alloys DOI: 10.1109/ICECC.2011.6066349 Database: Compendex |
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mlg1863楼2011-12-15 23:49:15
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4楼2011-12-16 00:19:46
mlg186
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5楼2011-12-16 10:55:07
mlg186
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6楼2011-12-16 10:55:46
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