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Chen, Haixia;   Ma, Shuyi;   Li, Yingfeng;   Ma, Ligang;   Huang, Xingli;   
College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou, China   

This paper appears in: Electronics, Communications and Control (ICECC), 2011 International Conference on
Issue Date: 9-11 Sept. 2011
On page(s): 906 - 909
Location: Ningbo, China
Print ISBN: 978-1-4577-0320-1
Digital Object Identifier: 10.1109/ICECC.2011.6066349  
Date of Current Version: 03 十一月 2011
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Accession number:  20114714544633

Title:  Microstructures and optical absorption of Ti-doped ZnO films

Authors:  Chen, Haixia1 ; Ma, Shuyi1 ; Li, Yingfeng1 ; Ma, Ligang1 ; Huang, Xingli1  

Author affiliation:  1  College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou, China


Corresponding author:  Ma, S. (syma@nwnu.edu.cn)  

Source title:  2011 International Conference on Electronics, Communications and Control, ICECC 2011 - Proceedings

Abbreviated source title:  Int. Conf. Electron., Commun. Control, ICECC - Proc.

Monograph title:  2011 International Conference on Electronics, Communications and Control, ICECC 2011 - Proceedings

Issue date:  2011

Publication year:  2011

Pages:  906-909

Article number:  6066349

Language:  English

ISBN-13:  9781457703218

Document type:  Conference article (CA)

Conference name:  2011 International Conference on Electronics, Communications and Control, ICECC 2011

Conference date:  September 9, 2011 - September 11, 2011

Conference location:  Ningbo, China

Conference code:  87394

Sponsor:  Ningbo University

Publisher:  IEEE Computer Society, 445 Hoes Lane - P.O.Box 1331, Piscataway, NJ 08855-1331, United States

Abstract:  Undoped and Ti-doped ZnO films were deposited using radio frequency reactive magnetron sputtering at various sputtering powers. The crystal structures, surface morphology, chemical state of titanium, zinc, and oxygen and optical properties in Ti-doped ZnO films were systematically investigated via X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and ultraviolet visible (UV-Vis)spectrophotometer. ZnO films showed a stronger preferred orientation toward c-axis and became smoother after Ti doping. The intensity of Ti-doped ZnO (002) peak further increased and surface showed more lattice defects as sputtering power increased from 100 W to 150 W. The XPS spectrum confirmed that Zn exists only in the oxidized state and the sample is a mixture of ZnO and TiO2. In addition, the UV absorption edge of ZnO films shifted to a longer wavelength as sputtering power increased. © 2011 IEEE.

Number of references:  16

Main heading:  Zinc oxide

Controlled terms:  Atomic force microscopy  -  Atomic spectroscopy  -  Crystal atomic structure  -  Light absorption  -  Magnetron sputtering  -  Metallic films  -  Microstructure  -  Optical properties  -  Semiconductor doping  -  Surface defects   -  Titanium  -  Titanium dioxide  -  X ray diffraction  -  X ray diffraction analysis  -  X ray photoelectron spectroscopy  -  Zinc

Uncontrolled terms:  Chemical state  -  Oxidized state  -  Preferred orientations  -  Radio frequency reactive magnetron sputtering  -  Sputtering power  -  Ti doping  -  TiO  -  UV absorption  -  XPS spectra  -  ZnO   -  ZnO films

Classification code:  951 Materials Science  -  741.1 Light/Optics  -  741.3 Optical Devices and Systems  -  801 Chemistry  -  804.2 Inorganic Compounds  -  933 Solid State Physics  -  933.1.1 Crystal Lattice  -  714.2 Semiconductor Devices and Integrated Circuits  -  542.3 Titanium and Alloys  -  539.3 Metal Plating  -  539 Metals Corrosion and Protection; Metal Plating  -  531 Metallurgy and Metallography  -  421 Strength of Building Materials; Mechanical Properties  -  546.3 Zinc and Alloys

DOI:  10.1109/ICECC.2011.6066349

Database:  Compendex

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Accession number:  20114714544633

Title:  Microstructures and optical absorption of Ti-doped ZnO films

Authors:  Chen, Haixia1 ; Ma, Shuyi1 ; Li, Yingfeng ...

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DOI:  10.1109/ICECC.2011.6066349

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