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wangdongh

木虫 (小有名气)

[求助] 求助文章的SCI检索号

题目:High Surface Area Porous Silicon Carbide Synthesized via Sol-Gel and Carbothermal Reduction Process
期刊:Journal of Optoelectronics and Advanced Materials
年卷页码:vol. 13 issue 3/2011 p. 218-222
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yituyitu

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引用回帖:
Originally posted by wangdongh at 2011-06-30 18:17:09:
题目:High Surface Area Porous Silicon Carbide Synthesized via Sol-Gel and Carbothermal Reduction Process
期刊:Journal of Optoelectronics and Advanced Materials
年卷页码:vol. 13 issue 3/2011 p. ...

什么是文章的sci检索号???
3楼2011-06-30 19:48:05
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shy2400

木虫 (著名写手)

【答案】应助回帖

wangdongh(金币+5): 谢谢 2011-06-30 18:46:14
引用回帖:
Originally posted by wangdongh at 2011-06-30 18:17:09:
题目:High Surface Area Porous Silicon Carbide Synthesized via Sol-Gel and Carbothermal Reduction Process
期刊:Journal of Optoelectronics and Advanced Materials
年卷页码:vol. 13 issue 3/2011 p. ...

High surface area porous silicon carbide synthesized via sol-gel and carbothermal reduction process
  

作者: Wang DH (Wang, Dong-Hua)  
来源出版物: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS    卷: 13    期: 2-4    页: 218-222    出版年: MAR 2011   
被引频次: 0     参考文献: 18     引证关系图      
摘要: A modified sol-gel method is proposed for the preparation of high surface area porous silicon carbide. In this method, furfuryl alcohol and tetraethoxysilane were used respectively as carbon and silicon precursors for preparing a carbonaceous silica xerogel. Polymethylhydrosiloxane (PMHS) was employed as pore-adjusting agent in the sol-gel process. SiC was obtained by the carbothermal reduction of the carbonaceous silica xerogel at 1300 degrees C in argon flow and then purified by removing excess silica, carbon and other impurities. XRD, FTIR, SEM, HRTEM and BET were used to characterize the SiC samples. The results show that the SiC products are found to have high specific surface area of 167 m(2)/g. PMHS has important effect on the surface area, pore volume of the SiC products. The SiC exhibits different photoluminescence properties.
文献类型: Article  
语言: English  
作者关键词: Sol-gel; Polymethylhydrosiloxane; High surface area silicon carbide; Carbothermal reduction; XRD; FTIR; SEM; HRTEM; BET  
KeyWords Plus: FABRICATION  
通讯作者地址: Wang, DH (通讯作者), Weinan Teachers Univ, Dept Chem & Chem Engn, Weinan 714000, Peoples R China  
地址:
1. Weinan Teachers Univ, Dept Chem & Chem Engn, Weinan 714000, Peoples R China  
电子邮件地址: wangdongh1978@163.com  
基金资助致谢:
基金资助机构 授权号
Natural Science Basic Research Plan in Shaanxi Province Of China  2010JQ6014  
Weinan Teachers University  10YKZ051  

[显示基金资助信息]   

The authors acknowledge the financial support from Natural Science Basic Research Plan in Shaanxi Province Of China (Program No. 2010JQ6014) and the Special Post-graduate Research Projects of Weinan Teachers University (No.10YKZ051).

出版商: NATL INST OPTOELECTRONICS, 1 ATOMISTILOR ST, PO BOX MG-5, BUCHAREST-MAGURELE 76900, ROMANIA  
IDS 号: 765VX  
ISSN: 1454-4164
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2楼2011-06-30 18:32:41
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