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ÌâÄ¿£ºHigh Surface Area Porous Silicon Carbide Synthesized via Sol-Gel and Carbothermal Reduction Process ÆÚ¿¯£ºJournal of Optoelectronics and Advanced Materials Äê¾íÒ³Â룺vol. 13 issue 3/2011 p. 218-222 |
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wangdongh(½ð±Ò+5): лл 2011-06-30 18:46:14
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High surface area porous silicon carbide synthesized via sol-gel and carbothermal reduction process ×÷Õß: Wang DH (Wang, Dong-Hua) À´Ô´³ö°æÎï: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS ¾í: 13 ÆÚ: 2-4 Ò³: 218-222 ³ö°æÄê: MAR 2011 ±»ÒýƵ´Î: 0 ²Î¿¼ÎÄÏ×: 18 ÒýÖ¤¹ØÏµÍ¼ ÕªÒª: A modified sol-gel method is proposed for the preparation of high surface area porous silicon carbide. In this method, furfuryl alcohol and tetraethoxysilane were used respectively as carbon and silicon precursors for preparing a carbonaceous silica xerogel. Polymethylhydrosiloxane (PMHS) was employed as pore-adjusting agent in the sol-gel process. SiC was obtained by the carbothermal reduction of the carbonaceous silica xerogel at 1300 degrees C in argon flow and then purified by removing excess silica, carbon and other impurities. XRD, FTIR, SEM, HRTEM and BET were used to characterize the SiC samples. The results show that the SiC products are found to have high specific surface area of 167 m(2)/g. PMHS has important effect on the surface area, pore volume of the SiC products. The SiC exhibits different photoluminescence properties. ÎÄÏ×ÀàÐÍ: Article ÓïÑÔ: English ×÷Õ߹ؼü´Ê: Sol-gel; Polymethylhydrosiloxane; High surface area silicon carbide; Carbothermal reduction; XRD; FTIR; SEM; HRTEM; BET KeyWords Plus: FABRICATION ͨѶ×÷ÕßµØÖ·: Wang, DH (ͨѶ×÷Õß), Weinan Teachers Univ, Dept Chem & Chem Engn, Weinan 714000, Peoples R China µØÖ·: 1. Weinan Teachers Univ, Dept Chem & Chem Engn, Weinan 714000, Peoples R China µç×ÓÓʼþµØÖ·: wangdongh1978@163.com »ù½ð×ÊÖúÖÂл: »ù½ð×ÊÖú»ú¹¹ ÊÚȨºÅ Natural Science Basic Research Plan in Shaanxi Province Of China 2010JQ6014 Weinan Teachers University 10YKZ051 [ÏÔʾ»ù½ð×ÊÖúÐÅÏ¢] The authors acknowledge the financial support from Natural Science Basic Research Plan in Shaanxi Province Of China (Program No. 2010JQ6014) and the Special Post-graduate Research Projects of Weinan Teachers University (No.10YKZ051). ³ö°æÉÌ: NATL INST OPTOELECTRONICS, 1 ATOMISTILOR ST, PO BOX MG-5, BUCHAREST-MAGURELE 76900, ROMANIA IDS ºÅ: 765VX ISSN: 1454-4164 |

2Â¥2011-06-30 18:32:41
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