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【答案】应助回帖
王灵杰(金币+200, 翻译EPI+1): 谢谢啊，非常感谢啊！！ 2011-06-01 20:53:48
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The high carrier mobility of graphene10–14 offers the possibility of building high-performance graphene-based electronics. 石墨烯的高载子移动率提供了构建高性能石墨烯电子产品的可能性。Recently, both theoretical15–18 and experimental1–4 works have shown that quantum confinement and edge effects introduce a band gap in narrow graphene ribbons independent of chirality, and the resulting GNR semiconductors can be used to make field-effect transistors.近来，理论和实验研究工作都显示，量子限制和边缘效应在窄石墨烯带引入不受手性支配的带隙。 Several approaches have been developed to obtain GNRs.已开发了几种获取GNR的途径。 Lithographic patterning has been used to produce wide ribbons (.20nm) from graphene sheets3,4, but the width and smoothness of the GNRs were limited by the resolution of the lithography and etching techniques. 平版印刷蚀刻技术被用来由石墨烯片制备宽带，但其制备的GNR的宽度和平滑度受限于平版印刷和蚀刻技术的分辨率。Bulk amounts of wide (20–300nm) and few-layered (2–40)GNRs were synthesized by a chemical vapour deposition method9.用化学蒸气沉淀方法合成了大量 宽度为20-300nm的少数层（2-40）GNR。A chemical sonication route developed by our group produced sub-10-nm GNR semiconductors from intercalated and exfoliated graphite1.一种由我们课题组开发的化学超声路线可由插入和片状剥落的石墨烯制备10nm以下的GNR半导体。 However,the yield of GNRs was low and their width distribution was broad;widths ranged from less than 10nm to ,100 nm.然而，此法制备GNR的产率低且宽度分布较宽，宽度可由不足10nm到100nm。 |
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