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王灵杰金虫 (初入文坛)
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[求助]
200金币求翻译！！！（材料类，纳米碳管）
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Graphene nanoribbons (GNRs) are materials with properties distinct from those of other carbon allotropes1–5. The all-semiconducting nature of sub-10-nm GNRs could bypass the problem of the extreme chirality dependence of the metal or semiconductor nature of carbon nanotubes (CNTs) in future electronics1,2.Currently, making GNRs using lithographic3,4,6, chemical7–9 or sonochemical1 methods is challenging. It is difficult to obtain GNRs with smooth edges and controllable widths at high yields.Here we show an approach to making GNRs by unzipping multiwalled carbon nanotubes by plasma etching of nanotubes partly embedded in a polymer film. The GNRs have smooth edges and a narrow width distribution (10–20 nm). Raman spectroscopy and electrical transport measurements reveal the high quality of the GNRs. Unzipping CNTs with well-defined structures in an array will allow the production of GNRs with controlled widths, edge structures, placement and alignment in a scalable fashion for device integration. The high carrier mobility of graphene10–14 offers the possibility of building high-performance graphene-based electronics. Recently, both theoretical15–18 and experimental1–4 works have shown that quantum confinement and edge effects introduce a band gap in narrowgraphene ribbons independent of chirality, and the resulting GNR semiconductors can be used to make field-effect transistors. Several approaches have been developed to obtain GNRs. Lithographic patterning has been used to produce wide ribbons (.20nm) from graphene sheets3,4, but the width and smoothness of the GNRs were limited by the resolution of the lithography and etching techniques.Bulkamounts of wide (20–300nm) and few-layered (2–40)GNRswere synthesized by a chemical vapour deposition method9. A chemical sonication route developed by our group produced sub-10-nm GNR semiconductors from intercalated and exfoliated graphite1. However,the yield of GNRs was low and their width distribution was broad;widths ranged from less than 10nm to ,100 nm. [ Last edited by 王灵杰 on 2011-6-1 at 12:12 ] |
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8814402
至尊木虫 (职业作家)
- 翻译EPI: 509
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【答案】应助回帖
★ ★
Mally89(金币+2): 感谢应助！~ 2011-06-01 18:40:32
Mally89(金币+2): 感谢应助！~ 2011-06-01 18:40:32
| Graphene nano ribbons (GNRs) are materials with properties distinct from those of other carbon allotropes1–5. 石墨烯纳米带(GNR)是一种具有与其他碳同素异形体截然不同特性的材料.The all-semiconducting nature of sub-10-nm GNRs could bypass the problem of the extreme chirality dependence of the metal or semiconductor nature of carbon nanotubes (CNTs) in future electronics1,2. 10nm以下GNR的完全半导体特性可在未来的电子工业中使用以绕开金属的极端手性依赖或碳纳米管半导体特性问题.Currently, making GNRs using lithographic3,4,6, chemical7–9 or sonochemical1 methods is challenging. 目前,通过平板印刷、化学或声化学方法制备GNR都面临挑战。It is difficult to obtain GNRs with smooth edges and controllable widths at high yields. 很难以高产率获得边缘平滑、宽度可控的GNR。Here we show an approach to making GNRs by unzipping multiwalled carbon nanotubes by plasma etching of nanotubes partly embedded in a polymer film. 这里我们展示一种制备GNR的方法：通过等离子蚀刻部分固定在聚合物膜上的纳米管剥开多层壁的碳纳米管。The GNRs have smooth edges and a narrow width distribution (10–20 nm). 此法制备的GNR具有平滑的边缘和窄的宽度分布（10-20nm）。Raman spectroscopy and electrical transport measurements reveal the high quality of the GNRs. 拉曼光谱和电运载测定显示了这类GNR优良的质量。Unzipping CNTs with well-defined structures in an array will allow the production of GNRs with controlled widths, edge structures, placement and alignment in a scalable fashion for device integration.剥开阵列排布结构明确的碳纳米管使得制备设备集成可用的宽度、边缘结构可控、以可调节方式布局和定位的GNR成为可能。 |
2楼2011-06-01 16:39:40
8814402
至尊木虫 (职业作家)
- 翻译EPI: 509
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- 专业: 药物学其他科学问题
【答案】应助回帖
王灵杰(金币+200, 翻译EPI+1): 谢谢啊，非常感谢啊！！ 2011-06-01 20:53:48
| The high carrier mobility of graphene10–14 offers the possibility of building high-performance graphene-based electronics. 石墨烯的高载子移动率提供了构建高性能石墨烯电子产品的可能性。Recently, both theoretical15–18 and experimental1–4 works have shown that quantum confinement and edge effects introduce a band gap in narrow graphene ribbons independent of chirality, and the resulting GNR semiconductors can be used to make field-effect transistors.近来，理论和实验研究工作都显示，量子限制和边缘效应在窄石墨烯带引入不受手性支配的带隙。 Several approaches have been developed to obtain GNRs.已开发了几种获取GNR的途径。 Lithographic patterning has been used to produce wide ribbons (.20nm) from graphene sheets3,4, but the width and smoothness of the GNRs were limited by the resolution of the lithography and etching techniques. 平版印刷蚀刻技术被用来由石墨烯片制备宽带，但其制备的GNR的宽度和平滑度受限于平版印刷和蚀刻技术的分辨率。Bulk amounts of wide (20–300nm) and few-layered (2–40)GNRs were synthesized by a chemical vapour deposition method9.用化学蒸气沉淀方法合成了大量 宽度为20-300nm的少数层（2-40）GNR。A chemical sonication route developed by our group produced sub-10-nm GNR semiconductors from intercalated and exfoliated graphite1.一种由我们课题组开发的化学超声路线可由插入和片状剥落的石墨烯制备10nm以下的GNR半导体。 However,the yield of GNRs was low and their width distribution was broad;widths ranged from less than 10nm to ,100 nm.然而，此法制备GNR的产率低且宽度分布较宽，宽度可由不足10nm到100nm。 |
3楼2011-06-01 17:03:30
