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zhouzwsz木虫 (小有名气)
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[求助]
求ＥＩ收录查询
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帮助查询下文是否被ＥＩ收录，谢谢。 Fabrication of Ge PIN photodiodes on silicon on insulator substrates under normal incidence SOI 基垂直入射Ge PIN 光电探测器的研制 光电子。激光 |
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【答案】应助回帖
zhouzwsz(金币+10): Thank you 2011-05-06 00:30:43
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已经收录。 Accession number: 20105013489488 Title: Fabrication of Ge PIN photodiodes on silicon-on-insulator substrates under normal incidence Authors: Zhou, Zhi-Wen1 ; He, Jing-Kai1 ; Wang, Rui-Chun1 ; Li, Cheng2 ; Yu, Jin-Zhong3 Author affiliation: 1 Shenzhen Institute of Information Technology, Shenzhen Institute of Information and Technology, Shenzhen 518029, China 2 Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China 3 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Corresponding author: Zhou, Z.-W. (zhouzw@sziit.com.cn) Source title: Guangdianzi Jiguang/Journal of Optoelectronics Laser Abbreviated source title: Guangdianzi Jiguang Volume: 21 Issue: 11 Issue date: November 2010 Publication year: 2010 Pages: 1609-1613 Language: Chinese ISSN: 10050086 CODEN: GUJIE9 Document type: Journal article (JA) Publisher: Board of Optronics Lasers, No. 47 Yang-Liu-Qing Ying-Jian Road, Tian-Jin City, 300380, China Abstract: A Ge PIN photodiode under normal incidence operating in the near infrared region is demonstrated on the silicon-on-insulator(SOI) substrate. The epitaxial Ge layers are prepared in an ultrahigh vacuum chemical vapor deposition system using low temperature Ge buffer technique. The results show that the dark current density of the device dominated by the surface leakage decreases with the mesa length increasing, and 17.2 mA/cm2 is obtained at 2 V reverse bias. A responsivity of 0.22 A/W at the wavelength of 1.31 μm corresponding to an external quantum efficiency of 20.8% is presented. The spectral response under zero bias shows four resonant peaks located at approximately 1.25 μm, 1.35 μm, 1.45 μm and 1.55 μm, respectively in the wavelength range from 1.2 μm to 1.6 μm with the full width at half maximum of nearly 50 nm. The resonant enhancement effect is attributed to the high reflectivity of the SOI wafer. The simulated response spectrum utilizing scattering matrix method perfectly matches the measured data. Number of references: 18 Main heading: Tensile strain Controlled terms: Chemical vapor deposition - Electron energy levels - Germanium - Photodiodes - Scattering parameters - Silicon wafers - Substrates Uncontrolled terms: External quantum efficiency - High reflectivity - Low temperatures - Measured data - Near infrared region - Normal incidence - Pin photodiode - Resonant enhancements - Resonant peaks - Responsivity - Reverse bias - Scattering matrix method - Silicon-on-insulator substrates - Simulated response - SOI wafers - Spectral response - Surface leakage - Ultrahigh vacuum chemical vapor deposition systems - Wavelength ranges - Zero bias Classification code: 932 High Energy Physics; Nuclear Physics; Plasma Physics - 804 Chemical Products Generally - 802.2 Chemical Reactions - 801 Chemistry - 933 Solid State Physics - 741.3 Optical Devices and Systems - 703.1 Electric Networks - 461 Bioengineering and Biology - 421 Strength of Building Materials; Mechanical Properties - 712.1.1 Single Element Semiconducting Materials Database: Compendex Compilation and indexing terms, © 2011 Elsevier Inc. |
2楼2011-05-05 22:17:27
