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zhengbiju1833

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透明导电氧化物薄膜具有高的电导率和高的光透过率，因而成为了科研和工业上的重点研究课题。重点体现在TCOs作为透明导电电极在光电子太阳能，平板显示，有机发光二极管等领域都有大量应用。其中，Sn掺杂In2O3 是应用最为广泛的材料。但是由于金属铟的匮乏及高昂的价格，限制了其在透明电极的应用，因而急需寻求新的替代材料。这种替代材料的电阻率应该在~10-3 Ω cm数量级或更小，在近紫外-可见光范围内的透过率大于80%，光学禁带宽度应在3 eV左右。目前，掺杂的TiO和SnO薄膜是替代ITO的最佳选择，因为它们的电阻率都较低,在500-600 nm可见光范围内的平均透光率达到85%，而且它们原材料价格低廉，可以大规模生产。TiO基和SnO基薄膜都可广泛应用于显示、探测器、抗反射涂层、气敏传感器、光电、电致变色器件等领域。因此，研究TiO基和SnO基透明导电氧化物薄膜的光学和电学性能具有重要的意义。
综上所述，本论文从两个基本点出发：一、如何进一步降低薄膜的电阻率；二、如何有效的改变薄膜的禁带宽度。重点研究了不同In、Sn含量掺杂TiO薄膜的结构、形貌、电学以及光学性质。另外，SnO与TiO都是同一族氧化物半导体，它们具有相似的半导体特性，所以本文对掺杂的SnO基薄膜及与TiO的复合薄膜也进行了深入的研究和探讨。利用X射线衍射仪(XRD)、场发射扫描电子显微镜(FE-SEM)和X射线光电子能谱(XPS)对薄膜的成分和微观组织进行了分析和观察。并利用紫外-可见光分光光度计、光致发光和霍尔效应仪对薄膜的光学和电学性能进行了表征。

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1楼 2011-04-14 09:02:41

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倪朋娟

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zhengbiju1833(金币+120, 翻译EPI+1): 2011-04-15 08:30:01

Transparent conductive oxide film has high conductivity and high light through rate so that it becomes the key research projects of research and industry . The key is reflected in TCOs as transparent conductive electrodes have lots of applications in photoelectron solar, flat panel display, organic light emitting diode, etc . Among them, Tin doped Indium2O3 is the most widely used materials. But because of high prices and the lack of indium that limits its application in transparent electrodes, we are seeking new alternative materials. This alternative materials,whose resistivity should in ~ 10- 3Ωcm orders of magnitude or smaller, through rate of near ultraviolet - visible range greater than 80%, optical forbidden band width should be about 3 eV.At present the film of the dopped Tin oxide and Tianium oxide is the best choice to replace ITO because their resistivity are low, within the scope of 500-600 nm visible light transmittance is 85 percent on average, and their of raw materials have low prices and they can become mass production.Titanium oxide and Tin oxide base film can be widely used in the aeras of display, detectors, antireflection coating, gas sensors, photoelectricity, electrochromic devices, etc. Therefore, the study of optical and electrical properties of Titanium oxide and Tin oxide base transparent conductive oxides film has the vital significance.
To sum up, this paper has two basic points: Firstly, how to further reduce the resistivity of the film; Secondly, how to effectively change the forbidden band width of thin film.The key research is structure, doping morphology, electrical and optical properties of the different dopped content of Indium and Tin dop TiO film. In addition, because Titanium oxide and Tin oxide are the same gens oxide semiconductor rand they have similar features, so Titanium oxide base thin films and Tin oxide composite film also studied and discussed in this paper. Using XRD, SEM and XPS to analyze and observe the composition and microstructure of the thin film. And by using ultraviolet - visible spectrophotometer, light to shine and hall effect apparatus on the optical and electrical performance films are also investigated.

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