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To determine the orientation of the as-grown XXX single crystal, XRD2 was conducted on the cross-section of the crystal (Fig. 4 a). It can be found that there is only one peak at 35.35¡ã which can be indexed to (0 0 2) plane. It means that the XXX crystal grows along the c-axis direction. The cleavage plane parallel to the growth direction was also tasted by XRD2, as shown in Fig 4b. There are two peaks at 38.11¡ã and 65.80¡ã, which can be indexed to (0 6 0) and (0 10 0) plan, respectively. The above results suggested that the grown sample is a single crystal of high perfection. The macroscopic defects, such as low-angle grain boundaries and inclusions of the as-grown crystal, were also checked by polarized-light microscopy in transmission configuration. Fig. 1 c shows a photograph of the wafer (Fig. 1 b) under polarized-light. Neither inculcations nor low angle-grain boundaries were observed on the wafer. |
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To determine the orientation of the as-grown XXX single crystal, XRD2 was conducted on the cross-section of the crystal (Fig. 4 a). It (could) be found that there (was) only one peak at 35.35¡ã which (could) be indexed to (0 0 2) plane. It means that the XXX crystal grows along the c-axis direction. The cleavage plane parallel to the growth direction was also tasted by XRD2, as shown in Fig 4b. There (were) two peaks at 38.11¡ã and 65.80¡ã, which (could) be indexed to (0 6 0) and (0 10 0) plan, respectively. The above results suggested that the grown sample (was) a single crystal of high perfection. The macroscopic defects, such as low-angle grain boundaries and inclusions of the as-grown crystal, were also checked by polarized-light microscopy in transmission configuration. Fig. 1 c (showed) a photograph of the wafer (Fig. 1 b) under polarized-light. Neither inculcations nor low angle-grain boundaries were observed on the wafer. |
3Â¥2011-02-27 08:45:29
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ÈÙÓþ°æÖ÷ (Ö°Òµ×÷¼Ò)
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- ³æºÅ: 535832
lliang921(½ð±Ò+15, ·ÒëEPI+1): 2011-02-28 10:16:46
|
To determine the orientation of the as-grown XXX single crystal, XRD2 was conducted on the cross-section of the crystal (Fig. 4 a). It can be found that there is only one peak at 35.35¡ã which can be indexed to (0 0 2) plane. It means that the XXX crystal grows along the c-axis direction. The cleavage plane parallel to the growth direction was also tasted by XRD2, as shown in Fig 4b. There are two peaks at 38.11¡ã and 65.80¡ã, which can be indexed to (0 6 0) and (0 10 0) plan, respectively. The above results suggested that the grown sample is a single crystal of high perfection. The macroscopic defects, such as low-angle grain boundaries and inclusions of the as-grown crystal, were also checked by polarized-light microscopy in transmission configuration. Fig. 1 c shows a photograph of the wafer (Fig. 1 b) under polarized-light. Neither inculcations nor low angle-grain boundaries were observed on the wafer. ûÓдóµÄÓï·¨´íÎó£¬Ê±Ì¬ÒªÒ»Ö£¬Ò»°ãʵÑéµÄ¶«Î÷дÂÛÎͼÊÇÓùýȥʽµÄ£¡ |
2Â¥2011-02-27 08:04:53














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