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2Â¥2010-09-29 09:03:42
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4Â¥2010-09-30 01:53:12
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kangfulike(½ð±Ò+1): 2010-09-30 08:57:45
kangfulike(½ð±Ò+2): 2010-10-19 15:17:37
kangfulike(½ð±Ò+2): 2010-10-19 15:17:37
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IEEEÊÇÃÀ¹ú×¢²áµÄ£¬IEEEµÄÔÓÖ¾¶¼Ó¦¸ÃËãÊÇÃÀ¹úµÄÔÓÖ¾¡£Ò»°ãÀ´Ëµ£¬IEEE Transactions£¨IEEE Transactions on Electron Devices£©µÄµµ´ÎÒª¸ß£¬¼´Ê¹ÓÐʱӰÏìÒò×ÓµÍЩ¡£ http://www.ieee.org/publications ... als/new_titles.html Electron Device Letters, IEEE IEEE Electron Device Letters was one of the most-cited journals, ranking number ten in electrical and electronics engineering in 2003, according to the annual Journal Citation Report (2003 edition) published by the Institute for Scientific Information. It comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes. Items are restricted to three pages and appear, on average, two months after acceptance. Please send all papers to theIEEE/EDS Publications Office. Electron Devices, IEEE Transactions on IEEE Transactions on Electron Devices was the number eighteen most-cited journal in electrical and electronics engineering in 2003, according to the annual Journal Citation Report (2003 edition) published by the Institute for Scientific Information. It comprises original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth. |
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