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During the ZTO grow procedure, feeding rod is melted, the gas from hole of low-density rod dissolved in the melt to form gas bubble. When a high rotation rate is applied, due to the centrifugal force effect, the gas bubbles are moved to the center axis and coalesced to grow. With the crystal growing, the bubble inclusions are formed. While a lower rotation rate is applied, gas bubbles move to the upper part and go out of the melt due to the diffusion. So a lower rotation is effective to suppress the formation of bubble inclusion. It can be also found that there is no low-angle grain boundary in the crystal grown at lower rotation rate. 最好改的地方用其他颜色标注一下,十万分感谢 |
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wangjianna
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4楼2010-04-14 16:07:45
2楼2010-04-14 15:50:55
wangjianna
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sirljz(金币+2):谢谢交流 2010-04-14 19:46
sirljz(金币+2):谢谢交流 2010-04-14 19:46
| During the ZTO grow procedure, feeding rod was melted, the gas from hole of low-density rod dissolved in the melt to form gas bubble. When a high rotation rate was applied, the gas bubbles were forced to the center axis due to the centrifugal force effect and coalesced to grow. With the crystal growing, there formed the bubble inclusions. While a lower rotation rate was applied, gas bubbles moved to the upper part and went out of the melt due to the diffusion. So a lower rotation is effective to suppress the formation of bubble inclusion. It can also be found that there is no low-angle grain boundary in the crystal grown at lower rotation rate. |

3楼2010-04-14 16:06:45
lastzealot
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| During the growing procedure of ZTO, the feeding rod was melted and the gas from holes of low-density rod dissolved into the melt to form gas bubbles. When a high rotation rate was applied, due to the centrifugal force effect, the gas bubbles moved to the center axis and coalesced. With the growing crystalizing, the bubble inclusions were formed. When a lower rotation rate was applied, gas bubbles moved to the upper part and went out of the melt due to the diffusion. So a lower rotation is effective to suppress the formation of bubble inclusions. It can be also found that there is no low-angle grain boundary in the crystal growth at lower rotation rate. |
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