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nevsaynev6710木虫 (正式写手)
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[交流]
求助翻译一词
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请教一下，哪位高人知道 strained silicon ,怎么翻译？应变后的硅？有没有比较合适通俗的翻译？ 不胜感激。 |
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ytinghost3
铁杆木虫 (著名写手)
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nevsaynev6710(金币+1):沙发，奖励一下 2010-03-14 15:00
nevsaynev6710(金币+1):不知道是否真实存在应变硅这种材料。。。 2010-03-14 15:04
nevsaynev6710(金币+2):追加两个金币，呵呵 2010-03-14 15:24
nevsaynev6710(金币+1):不知道是否真实存在应变硅这种材料。。。 2010-03-14 15:04
nevsaynev6710(金币+2):追加两个金币，呵呵 2010-03-14 15:24
应变硅 |
2楼2010-03-14 14:57:16
nevsaynev6710(金币+4):强人也，受教了。那是否可以译为应变硅呢？ 2010-03-14 15:14
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Strained siliconStrained silicon view original wikipedia article report problems w/this page Please let us know what is wrong with this page: Cancel In this article: Locations Images From the web: Images Videos Strained silicon Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon germanium (SiGe). As the atoms in the silicon layer align with the atoms of the underlying silicon germanium layer (which are arranged a little farther apart, with respect to those of a bulk silicon crystal), the links between the silicon atoms become stretched - thereby leading to strained silicon. Moving these silicon atoms farther apart reduces the atomic forces that interfere with the movement of electrons through the transistors and thus better mobility, resulting in better chip performance and lower energy consumption. These electrons can move 70% faster allowing strained silicon transistors to switch 35% faster. More recent advances include deposition of strained silicon using metalorganic vapor phase epitaxy (MOVPE) with metalorganics as starting sources, e.g. silicon sources (silane and dichlorosilane) and germanium sources (germane, germanium tetrachloride, and isobutylgermane). More recent methods of inducing strain include doping the source and drain with lattice mismatched atoms such as germanium and carbon. Germanium doping of up to 20% in the PMOS source and drain causes uniaxial compressive strain in the channel, increasing hole mobility. Carbon doping as low as 0.25% in the NMOS source and drain causes uniaxial tensile strain in the channel, increasing electron mobility. Covering the NMOS transistor with a highly stressed Silicon nitride layer is another way to create uniaxial tensile strain. |
3楼2010-03-14 15:08:26
4楼2010-03-14 15:19:49
nevsaynev6710
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5楼2010-03-14 15:23:39
6楼2010-03-14 15:25:40
