| 查看: 198 | 回复: 5 | |||
| 当前主题已经存档。 | |||
| 当前只显示满足指定条件的回帖，点击这里查看本话题的所有回帖 | |||
nevsaynev6710木虫 (正式写手)
|
[交流]
求助翻译一词
|
||
|
请教一下，哪位高人知道 strained silicon ,怎么翻译？应变后的硅？有没有比较合适通俗的翻译？ 不胜感激。 |
回复此楼» 猜你喜欢
全日制（定向）博士
已经有5人回复
-
假如你的研究生提出不合理要求
已经有10人回复
-
萌生出自己或许不适合搞科研的想法，现在跑or等等看？
已经有4人回复
-
Materials Today Chemistry审稿周期
已经有4人回复
-
参与限项
已经有3人回复
-
实验室接单子
已经有4人回复
-
对氯苯硼酸纯化
已经有3人回复
-
求助:我三月中下旬出站，青基依托单位怎么办？
已经有12人回复
-
所感
已经有4人回复
-
要不要辞职读博？
已经有7人回复
nevsaynev6710
木虫 (正式写手)
- 应助: 0 (幼儿园)
- 金币: 2113.7
- 散金: 3
- 帖子: 801
- 在线: 18.9小时
- 虫号: 784180
- 注册: 2009-06-01
- 专业: 硅微压力传感器
5楼2010-03-14 15:23:39
nevsaynev6710(金币+4):强人也，受教了。那是否可以译为应变硅呢？ 2010-03-14 15:14
|
Strained siliconStrained silicon view original wikipedia article report problems w/this page Please let us know what is wrong with this page: Cancel In this article: Locations Images From the web: Images Videos Strained silicon Strained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon germanium (SiGe). As the atoms in the silicon layer align with the atoms of the underlying silicon germanium layer (which are arranged a little farther apart, with respect to those of a bulk silicon crystal), the links between the silicon atoms become stretched - thereby leading to strained silicon. Moving these silicon atoms farther apart reduces the atomic forces that interfere with the movement of electrons through the transistors and thus better mobility, resulting in better chip performance and lower energy consumption. These electrons can move 70% faster allowing strained silicon transistors to switch 35% faster. More recent advances include deposition of strained silicon using metalorganic vapor phase epitaxy (MOVPE) with metalorganics as starting sources, e.g. silicon sources (silane and dichlorosilane) and germanium sources (germane, germanium tetrachloride, and isobutylgermane). More recent methods of inducing strain include doping the source and drain with lattice mismatched atoms such as germanium and carbon. Germanium doping of up to 20% in the PMOS source and drain causes uniaxial compressive strain in the channel, increasing hole mobility. Carbon doping as low as 0.25% in the NMOS source and drain causes uniaxial tensile strain in the channel, increasing electron mobility. Covering the NMOS transistor with a highly stressed Silicon nitride layer is another way to create uniaxial tensile strain. |
3楼2010-03-14 15:08:26
4楼2010-03-14 15:19:49
6楼2010-03-14 15:25:40