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In the last few years an intensive research effort has been devoted to synthesize diluted magnetic semiconductors DMSs in the hope of finding a material with semiconducting properties and ferromagnetism at room temperature RT. Standard DMS are produced by doping conventional semiconductors with transition metals,1 and the magnetic coupling usually originates from some carrier-induced mechanism. More recently two main experimental facts have challenged this ¡°traditional¡± picture. First magnetism was claimed in oxides DMS on both sides of the metal insulator transition,2 indicating that carriers alone are not sufficient to explain the magnetism and that intrinsic defects play a crucial role.3 Second, defect-rich or intentionally p-doped oxides revealed the possible evidence for RT magnetism. This second class of phenomena has been named d0 magnetism, indicating that no ions with partially filled d-shells are at the origin of the magnetic moment. The examples of d0 magnets are many and include thin films of HfO2,4 TiO2,5¨C7 In2O3,8 C-doped ZnO,9,10 and nanoparticles of different materials.11 Furthermore studies over chemically synthesized powders suggest that d0 magnetism can be found in bulk materials and not only in surfaces |
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7Â¥2009-11-19 15:03:26
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