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flimxia

银虫 (小有名气)

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虫号: 879834
注册: 2009-10-21
专业: 薄膜材料

[交流] 翻译一段磁性文献

In the last few years an intensive research effort has been
devoted to synthesize diluted magnetic semiconductors
DMSs in the hope of finding a material with semiconducting
properties and ferromagnetism at room temperature RT.
Standard DMS are produced by doping conventional semiconductors
with transition metals,1 and the magnetic coupling
usually originates from some carrier-induced mechanism.
More recently two main experimental facts have
challenged this “traditional” picture. First magnetism was
claimed in oxides DMS on both sides of the metal insulator
transition,2 indicating that carriers alone are not sufficient to
explain the magnetism and that intrinsic defects play a crucial
role.3 Second, defect-rich or intentionally p-doped oxides
revealed the possible evidence for RT magnetism. This
second class of phenomena has been named d0 magnetism,
indicating that no ions with partially filled d-shells are at the
origin of the magnetic moment. The examples of d0 magnets
are many and include thin films of HfO2,4 TiO2,5–7 In2O3,8
C-doped ZnO,9,10 and nanoparticles of different materials.11
Furthermore studies over chemically synthesized powders
suggest that d0 magnetism can be found in bulk materials and
not only in surfaces

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1楼 2009-11-16 13:45:57

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flimxia

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2楼2009-11-16 14:13:45

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雪绒

金虫 (小有名气)

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性别: MM
专业: 金属有机化学

在密集的研究工作一直致力于过去几年来合成稀磁半导体[目的地管理]在室温下在寻找与半导体[逆转录属性和铁磁性物质的希望]。标准管理事务司是由过渡金属掺杂传统半导体生产1，磁耦合，通常由一些运营商起源诱导机制.最近两个主要挑战这种“传统”图片实验事实。第一人声称磁性氧化物对金属绝缘体转变，管理事务司二，双方指出，运营商单独不足以解释磁性和固有缺陷发挥重要作用.3二，缺陷或故意丰富的磷掺杂氧化物揭示了用于RT磁可能证据。这第二类的现象已被任命为d0磁性，
这表明没有离子部分填充Ḏ壳在磁矩的痕迹。磁铁的d0的例子很多，如薄膜的高k，4二氧化钛,5 - 7氧化铟，8 C号掺杂ZnO，9,10和不同材料.11纳米粒子对化学合成的粉末此外，研究表明，d0磁性可以找到大量材料不仅仅局限在表面