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yexuqing新虫 (文学泰斗)
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中科院AI芯片新路径登Science！铁电材料新结构突破存储密度极限
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中科院AI芯片新路径登Science！铁电材料新结构突破存储密度极限 量子位 01-24 18:55 中科院物理所团队首次揭示了原子级“一维带电畴壁”新结构，其宽度仅为一个晶胞大小，突破了传统二维畴壁的物理极限。该结构通过氧离子“自我平衡”机制稳定存在，展现出极化-离子耦合的独特传输特性，理论存储密度高达20TB/cm²，为构建高能效类脑计算及下一代AI芯片奠定了全新物理基础。 |
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yexuqing
新虫 (文学泰斗)
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Observation of one-dimensional, charged domain walls in ferroelectric ZrO2 氧化锆铁电体中一维带电畴壁的观测 ▲ 作者：HAI ZHONG, SHIYU WANG, QINGHUA ZHANG, ZHUOHUI LIU, DONGGANG XIE, JIALI LU, SHIFENG JIN, SHUFANG ZHANG, ER-JIA GUO, AND CHEN GE ▲链接： https://www.science.org/doi/10.1126/science.aeb7280 ▲摘要： 具有纳米级厚度和束缚电荷的铁电带电畴壁通常被视为畴壁纳米电子学中可重构、高导电的超薄二维组件。此类极性拓扑结构的维度限制有望提高器件密度并解锁新功能。研究者报道了具有一维特性的180°头对头与尾对尾带电畴壁。 这些一维带电畴壁被限制在铁电氧化锆的极性层内，其宽度和厚度均具有原子级尺度。定量分析揭示了一种独特的畴壁屏蔽机制：束缚的极化电荷通过氧占位自平衡得以补偿。研究者展示了电场驱动下对这些一维带电畴壁的操控，揭示了极化翻转与氧离子输运之间的微观耦合关系。 ▲ Abstract： Ferroelectric charged domain walls (CDWs) with nanoscale thickness and bound charges are typically viewed as ultrathin, reconfigurable, and highly conductive two-dimensional components for domain wall nanoelectronics. Dimensional confinement of such polar topological structures has the potential to increase device density and unlock novel functionalities. We report 180° head-to-head and tail-to-tail CDWs exhibiting one-dimensional (1D) characteristics. These 1D CDWs are confined within the polar layers of ferroelectric ZrO2 and have atomic-scale dimensions in both width and thickness. Quantitative analysis unveils a distinct screening mechanism of these walls whereby bound polarization charges are compensated by self-balancing oxygen occupancy. We demonstrate electric field–driven manipulation of these 1D CDWs, revealing the microscopic coupling between polarization switching and oxygen-ion transport. |
2楼2026-01-26 10:05:42
