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fromto

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[交流] 分别散5金币求以下文章的EI,SCI或者ISTP的检索号

1.High critical electric field of thin silicon film and its realization in SOI high voltage devices
Hu, Shengdong ; Zhang, Bo; Li, Zhaoji Source: 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, 2008,
2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

2. Quantificational dependence of vertical breakdown voltage on top silicon and dielectric layer thicknesses for SOI high voltage devices
Hu, Shengdong ；Li, Zhaoji; Zhang, Bo
Source: 2008 International Conference on Communications, Circuits and Systems Proceedings, ICCCAS 2008, p 1274-1277, 2008, 2008 International Conference on Communications, Circuits and Systems Proceedings, ICCCAS 2008

3. A new analytical model of high voltage silicon on insulator(SOI) thin film devices
Hu, Shengdong ；Zhang, Bo Li;  Zhaoji
sourece: Chinese physics B, vol 18 no.1 315-319
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第三篇文章的EI检索号是：20091311986323

-------------------------------------------------------------------------
Accession number:  20091311986323

Title:  A new analytical model of high voltage silicon on insulator (SOI) thin film devices

Authors:  Hu, Sheng-Dong1 ; Zhang, Bo1 ; Li, Zhao-Ji1  

Author affiliation:  1  State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China


Corresponding author:  Hu, S.-D. (hushengdong@hotmail.com)  

Source title:  Chinese Physics B

Abbreviated source title:  Chin. Phys.

Volume:  18

Issue:  1

Issue date:  2009

Publication year:  2009

Pages:  315-319

Language:  English

ISSN:  16741056

Document type:  Journal article (JA)

Publisher:  Institute of Physics Publishing, Temple Back, Bristol, BS1 6BE, United Kingdom

Abstract:  A new analytical model of high voltage silicon on insulator (SOI) thin film devices is proposed, and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate, with a threshold energy taken into account for electron multiplying. Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness, the proposed silicon critical electric field increases sharply with silicon film thickness decreasing especially in the case of thin films, and can come to 141 V/μm at a film thickness of 0.1 μm which is much larger than the normal value of about 30V/μm. From the proposed formula of silicon critical electric field, the expressions of dielectric layer electric field and vertical breakdown voltage (VB,V) are obtained. Based on the model, an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field, and with a dielectric layer thickness of 2μm the vertical breakdown voltages reach 852 and 300V for the silicon film thicknesses of 0.1 and 5μm, respectively. In addition, a relation between dielectric layer thickness and silicon film thickness is obtained, indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed. 2D simulated results and some experimental results are in good agreement with analytical results. © 2009 Chin. Phys. Soc. and IOP Publishing Ltd.

Number of references:  16

Main heading:  Semiconducting silicon compounds

Controlled terms:  Computer simulation  -  DC generators  -  Dielectric properties  -  Electric breakdown  -  Electric conductivity  -  Electric field effects  -  Electric field measurement  -  Electricity  -  Heterojunction bipolar transistors  -  Ionization of gases   -  Magnetic films  -  Metallic films  -  Molecular beam epitaxy  -  MOSFET devices  -  Nonmetals  -  Poisson equation  -  Thin film devices  -  Thin films

Uncontrolled terms:  Analytical models  -  Analytical results  -  Breakdown voltage  -  Dielectric layers  -  High voltages  -  Ionization rates  -  Silicon film thickness  -  Silicon films  -  Silicon on insulators  -  Simulated results   -  Soi devices  -  SOI high voltage device  -  Thin silicon layer  -  Threshold energies  -  Ultra-thin films

Classification code:  942.2 Electric Variables Measurements  -  714.2 Semiconductor Devices and Integrated Circuits  -  723.5 Computer Applications  -  802.2 Chemical Reactions  -  804 Chemical Products Generally  -  921.2 Calculus  -  931.2 Physical Properties of Gases, Liquids and Solids  -  931.3 Atomic and Molecular Physics  -  933.1.2 Crystal Growth  -  712.1.2 Compound Semiconducting Materials  -  531 Metallurgy and Metallography  -  539 Metals Corrosion and Protection; Metal Plating  -  701 Electricity and Magnetism  -  712.1 Semiconducting Materials  -  701.1 Electricity: Basic Concepts and Phenomena  -  708.1 Dielectric Materials  -  708.4 Magnetic Materials  -  705.2.2 DC Generators

DOI:  10.1088/1674-1056/18/1/051

Database:  Compendex

   Compilation and indexing terms, © 2009 Elsevier Inc.
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sunke

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fromto(金币+5,VIP+0):谢谢 8-28 16:58
第一篇文章的EI
Accession number:  20091412014969

Title:  High critical electric field of thin silicon film and its realization in SOI high voltage devices

Authors:  Hu, Shengdong1 ; Zhang, Bo1 ; Li, Zhaoji1  

Author affiliation:  1  State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China


Corresponding author:  Hu, S. (hushengdong@hotmail.com)  

Source title:  2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Abbreviated source title:  IEEE Int. Conf. Electron Devices Solid-State Circuits, EDSSC

Monograph title:  2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Issue date:  2008

Publication year:  2008

Article number:  4760648

Language:  English

ISBN-13:  9781424425402

Document type:  Conference article (CA)

Conference name:  2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Conference date:  December 8, 2008 - December 10, 2008

Conference location:  Hong Kong, China

Conference code:  75769

Publisher:  Inst. of Elec. and Elec. Eng. Computer Society, 445 Hoes Lane - P.O.Box 1331, Piscataway, NJ 08855-1331, United States

Abstract:  Taking threshold energy ΕT into accounting for electron multiplying, the formula of silicon critical electric field ES,C is given as a function of silicon film thickness ts from an effective ionization rate aeff ES,C is increasing with the decreasing of ts especially at thinner ts 2-D simulative and some experimental results as well as the comparing with several other familiar expressions of electric field proved the proposed ES,C is valid for both thick and thin silicon film. Thin silicon film with high E S,C can be used to enhance dielectric field EI and increase vertical breakdown voltage VB.V of SOI high voltage devices. A high voltage SOI device with 80nm silicon layer and 0.4μm dielectric layer is designed. A high ES,C of 134V/μm is obtained, which makes EI and VB,V reach to 416 V/μm and 178V, respectively. © 2008 IEEE.

Number of references:  18

Main heading:  Solid state devices

Controlled terms:  DC generators  -  Dielectric properties  -  Electric conductivity  -  Electric field effects  -  Ionization of gases  -  Metallic films  -  Nonmetals

Uncontrolled terms:  Break down voltages  -  Critical electric fields  -  Dielectric fields  -  Dielectric layers  -  High voltage soi devices  -  High-voltage devices  -  Ionization rates  -  Silicon film thickness  -  Silicon layers  -  Thin silicon films   -  Threshold energies

Classification code:  804 Chemical Products Generally  -  802.2 Chemical Reactions  -  714.2 Semiconductor Devices and Integrated Circuits  -  708.1 Dielectric Materials  -  931.2 Physical Properties of Gases, Liquids and Solids  -  705.2.2 DC Generators  -  701 Electricity and Magnetism  -  539 Metals Corrosion and Protection; Metal Plating  -  531 Metallurgy and Metallography  -  701.1 Electricity: Basic Concepts and Phenomena

DOI:  10.1109/EDSSC.2008.4760648

Database:  Compendex

   Compilation and indexing terms, © 2009 Elsevier Inc.
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sunke

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fromto(金币+5,VIP+0):SCI的格式好像不是这个吧，麻烦再帮我确认下好嘛 8-28 16:58
第三篇SCI: 000262494700051

FN ISI Export Format
VR 1.0
PT  J
AU  Hu, SD
Zhang, B
Li, ZJ
AF  Hu Sheng-Dong
Zhang Bo
Li Zhao-Ji
TI  A new analytical model of high voltage silicon on insulator (SOI) thin film devices
SO  CHINESE PHYSICS B
LA  English
DT  Article
DE  silicon critical electric field; breakdown voltage; thin silicon layer; SOI high voltage device
ID  P-N JUNCTIONS; AVALANCHE BREAKDOWN; LAYER
AB  A new analytical model of high voltage silicon on insulator (SOI) thin film devices is proposed, and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate, with a threshold energy taken into account for electron multiplying. Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness, the proposed silicon critical electric field increases sharply with silicon film thickness decreasing especially in the case of thin films, and can come to 141 V/mu m at a film thickness of 0.1 mu m which is much larger than the normal value of about 30 V/mu m. From the proposed formula of silicon critical electric field, the expressions of dielectric layer electric field and vertical breakdown voltage (V-B,V- V) are obtained. Based on the model, an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field, and with a dielectric layer thickness of 2 mu m the vertical breakdown voltages reach 852 and 300V for the silicon film thickness of 0.1 and 5 mu m, respectively. In addition, a relation between dielectric layer thickness and silicon film thickness is obtained, indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed. 2D simulated results and some experimental results are in good agreement with analytical results.
C1  [Hu Sheng-Dong; Zhang Bo; Li Zhao-Ji] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China.
RP  Hu, SD, Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China.
EM  hushengdong@hotmail.com
FU  National Natural Science Foundation of China [60436030]; National Laboratory of Analogue Integrated Circuits, China [914C090305060C09]
FX  Project supported by the National Natural Science Foundation of China (Grant No 60436030) and National Laboratory of Analogue Integrated Circuits, China (Grant No 914C090305060C09).
NR  16
TC  0
PU  IOP PUBLISHING LTD
PI  BRISTOL
PA  DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND
SN  1674-1056
J9  CHIN PHYS B
JI  Chin. Phys. B
PD  JAN
PY  2009
VL  18
IS  1
BP  315
EP  319
PG  5
SC  Physics, Multidisciplinary
GA  395AP
UT  ISI:000262494700051
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littlemark

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fromto(金币+5,VIP+0):谢谢，非常想知道这篇是不是被ISTP检索了，麻烦再帮帮忙 8-28 17:00
第二篇的EI
Accession number:  20090211852754

Title:  Quantificational dependence of vertical breakdown voltage on top silicon and dielectric layer thicknesses for SOI high voltage devices

Authors:  Hu, Shengdong1 ; Li, Zhaoji1 ; Zhang, Bo1  

Author affiliation:  1  State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China


Corresponding author:  Hu, S. (hushengdong@hotmail.com)  

Source title:  2008 International Conference on Communications, Circuits and Systems Proceedings, ICCCAS 2008

Abbreviated source title:  Int. Conf. Commun., Circuits Syst. Proc., ICCCAS

Monograph title:  2008 International Conference on Communications, Circuits and Systems Proceedings, ICCCAS 2008

Issue date:  2008

Publication year:  2008

Pages:  1274-1277

Article number:  4657999

Language:  English

ISBN-13:  9781424420636

Document type:  Conference article (CA)

Conference name:  2008 International Conference on Communications, Circuits and Systems, ICCCAS 2008

Conference date:  May 25, 2008 - May 27, 2008

Conference location:  Xiamen, Fujian Province, China

Conference code:  74504

Sponsor:  Hong Kong University of Science and Technology (HKUST); City University of Hong Kong; Guilin University of Electronic Technology (GUET)

Publisher:  Inst. of Elec. and Elec. Eng. Computer Society, 445 Hoes Lane - P.O.Box 1331, Piscataway, NJ 08855-1331, United States

Abstract:  The formula of silicon critical electric field ES,C is given as a function of silicon film thickness tS from an effective ionization rate aeff which is experimentally obtained by taking threshold energy ΕT into accounting for electron multiplying. By the proposed ES,C, quantificational dependence of vertical breakdown voltage VB,V of SOI high voltage devices on top silicon thickness t S and dielectric layer thickness tI is discussed. For the same tS, a thicker tI brings on a higher VB,V because of a stated ES,C, VB,V=348V, 509V with t S=1μm for tI= 2μm, 3μm, respectively. For the same tI, VB,V increases with the decreasing of t S because of a crescent ES,C when tS is thin, and with tI=2μm, VB,V=852V, 348V for tS of 0.1μm and 1μm, respectively. So an ultra thin tS can be used to provide a high VB,V for SOI devicces. In addition, relation of tI on tS leading to the minimum of VB,V is given, which should be avoided when a SOI device is designed. 2-D simulative and some experimental results meet well with analytical results. ©2008 IEEE.

Number of references:  15

Main heading:  Ionization of gases

Controlled terms:  DC generators  -  Electric breakdown  -  Electric conductivity  -  Electric fields

Uncontrolled terms:  Analytical results  -  Break down voltages  -  Critical electric fields  -  Dielectric layer thicknesses  -  High voltages  -  Ionization rates  -  Silicon film thicknesses  -  Silicon thicknesses  -  SOI devices  -  Threshold energies

Classification code:  701.1 Electricity: Basic Concepts and Phenomena  -  705.2.2 DC Generators  -  802.2 Chemical Reactions  -  931.2 Physical Properties of Gases, Liquids and Solids

DOI:  10.1109/ICCCAS.2008.4657999

Database:  Compendex

   Compilation and indexing terms, © 2009 Elsevier Inc.
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sunke

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★ ★ ★ ★ ★
fromto(金币+5,VIP+0):非常想知道这篇是不是被ISTP检索了，麻烦帮帮忙再 8-28 17:01
第二篇EI：
Accession number:  20090211852754

Title:  Quantificational dependence of vertical breakdown voltage on top silicon and dielectric layer thicknesses for SOI high voltage devices

Authors:  Hu, Shengdong1 ; Li, Zhaoji1 ; Zhang, Bo1  

Author affiliation:  1  State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China


Corresponding author:  Hu, S. (hushengdong@hotmail.com)  

Source title:  2008 International Conference on Communications, Circuits and Systems Proceedings, ICCCAS 2008

Abbreviated source title:  Int. Conf. Commun., Circuits Syst. Proc., ICCCAS

Monograph title:  2008 International Conference on Communications, Circuits and Systems Proceedings, ICCCAS 2008

Issue date:  2008

Publication year:  2008

Pages:  1274-1277

Article number:  4657999

Language:  English

ISBN-13:  9781424420636

Document type:  Conference article (CA)

Conference name:  2008 International Conference on Communications, Circuits and Systems, ICCCAS 2008

Conference date:  May 25, 2008 - May 27, 2008

Conference location:  Xiamen, Fujian Province, China

Conference code:  74504

Sponsor:  Hong Kong University of Science and Technology (HKUST); City University of Hong Kong; Guilin University of Electronic Technology (GUET)

Publisher:  Inst. of Elec. and Elec. Eng. Computer Society, 445 Hoes Lane - P.O.Box 1331, Piscataway, NJ 08855-1331, United States

Abstract:  The formula of silicon critical electric field ES,C is given as a function of silicon film thickness tS from an effective ionization rate aeff which is experimentally obtained by taking threshold energy ΕT into accounting for electron multiplying. By the proposed ES,C, quantificational dependence of vertical breakdown voltage VB,V of SOI high voltage devices on top silicon thickness t S and dielectric layer thickness tI is discussed. For the same tS, a thicker tI brings on a higher VB,V because of a stated ES,C, VB,V=348V, 509V with t S=1μm for tI= 2μm, 3μm, respectively. For the same tI, VB,V increases with the decreasing of t S because of a crescent ES,C when tS is thin, and with tI=2μm, VB,V=852V, 348V for tS of 0.1μm and 1μm, respectively. So an ultra thin tS can be used to provide a high VB,V for SOI devicces. In addition, relation of tI on tS leading to the minimum of VB,V is given, which should be avoided when a SOI device is designed. 2-D simulative and some experimental results meet well with analytical results. ©2008 IEEE.

Number of references:  15

Main heading:  Ionization of gases

Controlled terms:  DC generators  -  Electric breakdown  -  Electric conductivity  -  Electric fields

Uncontrolled terms:  Analytical results  -  Break down voltages  -  Critical electric fields  -  Dielectric layer thicknesses  -  High voltages  -  Ionization rates  -  Silicon film thicknesses  -  Silicon thicknesses  -  SOI devices  -  Threshold energies

Classification code:  701.1 Electricity: Basic Concepts and Phenomena  -  705.2.2 DC Generators  -  802.2 Chemical Reactions  -  931.2 Physical Properties of Gases, Liquids and Solids

DOI:  10.1109/ICCCAS.2008.4657999

Database:  Compendex

   Compilation and indexing terms, © 2009 Elsevier Inc.
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显示 1 条，共 4 条
作者: Luo, XR (Luo, Xiaorong); Fu, DP (Fu, Daping); Lei, L (Lei, Lei); Zhang, B (Zhang, Bo); Li, ZJ (Li, Zhaoji); Hu, SD (Hu, Shengdong); Zhang, ZY (Zhang, Zhengyuan); Feng, ZC (Feng, Zhicheng); Yan, B (Yan, Bin)
标题: Eliminating Back-Gate Bias Effects in a Novel SOI High-Voltage Device Structure
来源出版物: IEEE TRANSACTIONS ON ELECTRON DEVICES, 56 (8): 1659-1666 AUG 2009
摘要: A novel silicon-on-insulator (SOI) high-voltage device structure and its eliminating back-gate bias effects are presented. The structure is characterized by a compound buried layer (CBL) made of two oxide layers and a polysilicon layer between them. At the high-voltage blocking state, holes collected on the polysilicon bottom interface shield the SOI layer and the upper buried oxide (UBO) layer from the back-gate bias V-bg, resulting in a constant breakdown voltage (BV) and the same electric field and potential distributions in the SOI layer, UBO, and polysilicon under different the back-gate biases for a CBL SOI REduced SURface Field (RESURF) Lateral Double-diffused MOS (LDMOS). V-bg only impacts the field strength and voltage drop in the lower buried oxide (LBO) layer. Moreover, based on the continuity of electric displacement, the holes enhance the field in the LBO from 80 V/mu m for the buried oxide in the conventional SOI to 457 V/mu m at V-bg = 0 V, leading to a high BV in CBL SOI. A 747-V CBL SOI LDMOS is fabricated, and its eliminating back-gate bias effect is verified by measurement. In addition, the CBL SOI structure can alleviate the self-heating effects due to a window in the UBO.
地址: [Luo, Xiaorong; Fu, Daping; Lei, Lei; Zhang, Bo; Li, Zhaoji; Hu, Shengdong; Yan, Bin] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China; [Zhang, Zhengyuan; Feng, Zhicheng] Natl Lab Analog Integrated Circuits, Chongqing 400060, Peoples R China
通讯作者地址: Luo, XR, Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China.
电子邮箱地址: xrluo@uestc.edu.cn
被引频次: 0
ISSN: 0018-9383
DOI: 10.1109/TED.2009.2024027
来源文献页码计数: 8
ISI 文献传递号: 474KO

--------------------------------------------------------------------------------
显示 2 条，共 4 条
作者: Hu, SD (Hu, Shengdong); Li, ZJ (Li, Zhaoji); Zhang, B (Zhang, Bo)
书籍团体作者: IEEE
标题: Quantificational Dependence of Vertical Breakdown Voltage on Top Silicon and Dielectric Layer Thicknesses for SOI High Voltage Devices
来源出版物: 2008 INTERNATIONAL CONFERENCE ON COMMUNICATIONS, CIRCUITS AND SYSTEMS PROCEEDINGS, VOLS 1 AND 2 - VOL 1: COMMUNICATION THEORY AND SYSTEM - VOL 2: SIGNAL PROCESSING, COMPUTATIONAL INTELLIGENCE, CIRCUITS AND SYSTEMS : 1412-1415 2008
丛书标题: International Conference on Communications, Circuits and Systems
会议标题: International Conference on communications, Circuits and Systems
会议日期: MAY 25-27, 2008
会议地点: Xiamen City, PEOPLES R CHINA
会议主办方: Xiamen Univ
摘要: The formula of silicon critical electric field E-S,E-C is given as a function of silicon film thickness t(S) from an effective ionization rate alpha(eff) which is experimentally obtained by taking threshold energy epsilon(T) into accounting for electron multiplying. By the proposed E-S,E-C, quantificational dependence of vertical breakdown voltage V-B,V-V of SOI high voltage devices on top silicon thickness t(S) and dielectric layer thickness t(I) is discussed. For the same t(S), a thicker t(I) brings on a higher V-B,V-V because of a stated E-S,E-C, V-B,V-V=348V, 509V with t(S)=1 mu m for t(I)=2 mu m, 3 mu m, respectively. For the same t(I), V-B,V-V increases with the decreasing of t(S) because of a crescent E-S,E-C when t(S) is thin, and with t(I)=2 mu m, V-B,V-V=852V, 348V for t(S) of 0.1 mu m and 1 mu m, respectively. So an ultra thin t(S) can be used to provide a high V-B,V-V for SOI devicces. In addition, relation of t(I) on t(S) leading to the minimum of V-B,V-V is given, which should be avoided when a SOI device is designed. 2-D simulative and some experimental results meet well with analytical results.
地址: [Hu, Shengdong; Li, Zhaoji; Zhang, Bo] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
通讯作者地址: Hu, SD, Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China.
被引频次: 0
ISBN: 978-1-4244-2063-6
来源文献页码计数: 4
ISI 文献传递号: BIZ12

--------------------------------------------------------------------------------
显示 3 条，共 4 条
作者: Hu, SD (Hu Sheng-Dong); Zhang, B (Zhang Bo); Li, ZJ (Li Zhao-Ji)
标题: A new analytical model of high voltage silicon on insulator (SOI) thin film devices
来源出版物: CHINESE PHYSICS B, 18 (1): 315-319 JAN 2009
摘要: A new analytical model of high voltage silicon on insulator (SOI) thin film devices is proposed, and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate, with a threshold energy taken into account for electron multiplying. Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness, the proposed silicon critical electric field increases sharply with silicon film thickness decreasing especially in the case of thin films, and can come to 141 V/mu m at a film thickness of 0.1 mu m which is much larger than the normal value of about 30 V/mu m. From the proposed formula of silicon critical electric field, the expressions of dielectric layer electric field and vertical breakdown voltage (V-B,V- V) are obtained. Based on the model, an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field, and with a dielectric layer thickness of 2 mu m the vertical breakdown voltages reach 852 and 300V for the silicon film thickness of 0.1 and 5 mu m, respectively. In addition, a relation between dielectric layer thickness and silicon film thickness is obtained, indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed. 2D simulated results and some experimental results are in good agreement with analytical results.
地址: [Hu Sheng-Dong; Zhang Bo; Li Zhao-Ji] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
通讯作者地址: Hu, SD, Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China.
电子邮箱地址: hushengdong@hotmail.com
被引频次: 0
ISSN: 1674-1056
来源文献页码计数: 5
ISI 文献传递号: 395AP

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作者: Luo, XR (Luo, Xiaorong); Li, ZJ (Li, Zhaoji); Zhang, B (Zhang, Bo); Fu, DP (Fu, Daping); Zhan, Z (Zhan, Zhan); Chen, KF (Chen, Kaifeng); Hu, SD (Hu, Shengdong); Zhang, ZY (Zhang, Zhengyuan); Feng, ZC (Feng, Zhicheng); Yan, B (Yan, Bin)
标题: Realization of High Voltage (> 700 V) in New SOI Devices With a Compound Buried Layer
来源出版物: IEEE ELECTRON DEVICE LETTERS, 29 (12): 1395-1397 DEC 2008
摘要: A novel silicon-on-insulator (SOI) high-voltage device with a compound buried layer (CBL SOI) consisting of two oxide layers and a polysilicon layer between them is proposed. Its breakdown characteristic is investigated theoretically and experimentally. Theoretically, its vertical breakdown voltage (BV) is shared by two oxide layers; furthermore, the electric field in the lower buried oxide layer of E-I2 is increased from about 78 to 454 V/mu m by holes collected on the bottom interface of the polysilicon. Both result in an enhanced BV. Experimentally, 762-V SOT diode is obtained. The maximal temperature of CBL SOT diode is reduced by 16.9 K because a window in the upper buried oxide layer alleviates the self-heating effect.
地址: [Luo, Xiaorong; Li, Zhaoji; Zhang, Bo; Fu, Daping; Zhan, Zhan; Chen, Kaifeng; Hu, Shengdong; Zhang, Zhengyuan; Feng, Zhicheng; Yan, Bin] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
通讯作者地址: Luo, XR, Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China.
电子邮箱地址: xrluo@uestc.edu.cn; zjli@uestc.edu.cn; zhangbo@uestc.edu.cn; 416983114@qq.com; uestc2005203030@yahoo.com.cn; kfeng.chen@gmail.com; hushengdong@hotmail.com
被引频次: 0
ISSN: 0741-3106
DOI: 10.1109/LED.2008.2007307
来源文献页码计数: 3
ISI 文献传递号: 389AL
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