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fromto木虫 (著名写手)
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分别散5金币求以下文章的EI,SCI或者ISTP的检索号
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1.High critical electric field of thin silicon film and its realization in SOI high voltage devices Hu, Shengdong ; Zhang, Bo; Li, Zhaoji Source: 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, 2008, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2. Quantificational dependence of vertical breakdown voltage on top silicon and dielectric layer thicknesses for SOI high voltage devices Hu, Shengdong ；Li, Zhaoji; Zhang, Bo Source: 2008 International Conference on Communications, Circuits and Systems Proceedings, ICCCAS 2008, p 1274-1277, 2008, 2008 International Conference on Communications, Circuits and Systems Proceedings, ICCCAS 2008 3. A new analytical model of high voltage silicon on insulator(SOI) thin film devices Hu, Shengdong ；Zhang, Bo Li; Zhaoji sourece: Chinese physics B, vol 18 no.1 315-319 |
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至尊木虫 (职业作家)
文献检索是我的乐趣!帮助大 .
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10楼2009-08-30 20:18:36
2楼2009-08-28 14:51:38
bear2002_0
至尊木虫 (文坛精英)
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fromto(金币+5,VIP+0):谢谢您！ 8-28 14:57
fromto(金币+5,VIP+0):谢谢您！ 8-28 14:57
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第三篇文章的EI检索号是：20091311986323 ------------------------------------------------------------------------- Accession number: 20091311986323 Title: A new analytical model of high voltage silicon on insulator (SOI) thin film devices Authors: Hu, Sheng-Dong1 ; Zhang, Bo1 ; Li, Zhao-Ji1 Author affiliation: 1 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China Corresponding author: Hu, S.-D. (hushengdong@hotmail.com) Source title: Chinese Physics B Abbreviated source title: Chin. Phys. Volume: 18 Issue: 1 Issue date: 2009 Publication year: 2009 Pages: 315-319 Language: English ISSN: 16741056 Document type: Journal article (JA) Publisher: Institute of Physics Publishing, Temple Back, Bristol, BS1 6BE, United Kingdom Abstract: A new analytical model of high voltage silicon on insulator (SOI) thin film devices is proposed, and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate, with a threshold energy taken into account for electron multiplying. Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness, the proposed silicon critical electric field increases sharply with silicon film thickness decreasing especially in the case of thin films, and can come to 141 V/μm at a film thickness of 0.1 μm which is much larger than the normal value of about 30V/μm. From the proposed formula of silicon critical electric field, the expressions of dielectric layer electric field and vertical breakdown voltage (VB,V) are obtained. Based on the model, an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field, and with a dielectric layer thickness of 2μm the vertical breakdown voltages reach 852 and 300V for the silicon film thicknesses of 0.1 and 5μm, respectively. In addition, a relation between dielectric layer thickness and silicon film thickness is obtained, indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed. 2D simulated results and some experimental results are in good agreement with analytical results. © 2009 Chin. Phys. Soc. and IOP Publishing Ltd. Number of references: 16 Main heading: Semiconducting silicon compounds Controlled terms: Computer simulation - DC generators - Dielectric properties - Electric breakdown - Electric conductivity - Electric field effects - Electric field measurement - Electricity - Heterojunction bipolar transistors - Ionization of gases - Magnetic films - Metallic films - Molecular beam epitaxy - MOSFET devices - Nonmetals - Poisson equation - Thin film devices - Thin films Uncontrolled terms: Analytical models - Analytical results - Breakdown voltage - Dielectric layers - High voltages - Ionization rates - Silicon film thickness - Silicon films - Silicon on insulators - Simulated results - Soi devices - SOI high voltage device - Thin silicon layer - Threshold energies - Ultra-thin films Classification code: 942.2 Electric Variables Measurements - 714.2 Semiconductor Devices and Integrated Circuits - 723.5 Computer Applications - 802.2 Chemical Reactions - 804 Chemical Products Generally - 921.2 Calculus - 931.2 Physical Properties of Gases, Liquids and Solids - 931.3 Atomic and Molecular Physics - 933.1.2 Crystal Growth - 712.1.2 Compound Semiconducting Materials - 531 Metallurgy and Metallography - 539 Metals Corrosion and Protection; Metal Plating - 701 Electricity and Magnetism - 712.1 Semiconducting Materials - 701.1 Electricity: Basic Concepts and Phenomena - 708.1 Dielectric Materials - 708.4 Magnetic Materials - 705.2.2 DC Generators DOI: 10.1088/1674-1056/18/1/051 Database: Compendex Compilation and indexing terms, © 2009 Elsevier Inc. |
3楼2009-08-28 14:55:28
sunke
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fromto(金币+5,VIP+0):谢谢 8-28 16:58
fromto(金币+5,VIP+0):谢谢 8-28 16:58
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第一篇文章的EI Accession number: 20091412014969 Title: High critical electric field of thin silicon film and its realization in SOI high voltage devices Authors: Hu, Shengdong1 ; Zhang, Bo1 ; Li, Zhaoji1 Author affiliation: 1 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China Corresponding author: Hu, S. (hushengdong@hotmail.com) Source title: 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC Abbreviated source title: IEEE Int. Conf. Electron Devices Solid-State Circuits, EDSSC Monograph title: 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC Issue date: 2008 Publication year: 2008 Article number: 4760648 Language: English ISBN-13: 9781424425402 Document type: Conference article (CA) Conference name: 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC Conference date: December 8, 2008 - December 10, 2008 Conference location: Hong Kong, China Conference code: 75769 Publisher: Inst. of Elec. and Elec. Eng. Computer Society, 445 Hoes Lane - P.O.Box 1331, Piscataway, NJ 08855-1331, United States Abstract: Taking threshold energy ΕT into accounting for electron multiplying, the formula of silicon critical electric field ES,C is given as a function of silicon film thickness ts from an effective ionization rate aeff ES,C is increasing with the decreasing of ts especially at thinner ts 2-D simulative and some experimental results as well as the comparing with several other familiar expressions of electric field proved the proposed ES,C is valid for both thick and thin silicon film. Thin silicon film with high E S,C can be used to enhance dielectric field EI and increase vertical breakdown voltage VB.V of SOI high voltage devices. A high voltage SOI device with 80nm silicon layer and 0.4μm dielectric layer is designed. A high ES,C of 134V/μm is obtained, which makes EI and VB,V reach to 416 V/μm and 178V, respectively. © 2008 IEEE. Number of references: 18 Main heading: Solid state devices Controlled terms: DC generators - Dielectric properties - Electric conductivity - Electric field effects - Ionization of gases - Metallic films - Nonmetals Uncontrolled terms: Break down voltages - Critical electric fields - Dielectric fields - Dielectric layers - High voltage soi devices - High-voltage devices - Ionization rates - Silicon film thickness - Silicon layers - Thin silicon films - Threshold energies Classification code: 804 Chemical Products Generally - 802.2 Chemical Reactions - 714.2 Semiconductor Devices and Integrated Circuits - 708.1 Dielectric Materials - 931.2 Physical Properties of Gases, Liquids and Solids - 705.2.2 DC Generators - 701 Electricity and Magnetism - 539 Metals Corrosion and Protection; Metal Plating - 531 Metallurgy and Metallography - 701.1 Electricity: Basic Concepts and Phenomena DOI: 10.1109/EDSSC.2008.4760648 Database: Compendex Compilation and indexing terms, © 2009 Elsevier Inc. |
4楼2009-08-28 15:43:20
