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*data for ICSD #30071 Coll Code 30071 Rec Date 1980/01/01 Mod Date 2006/04/01 Chem Name Silicon Telluride (2/3) Structured Si2 Te3 Sum Si2 Te3 ANX N2O3 D(calc) 4.52 Title Crystal growth and structure determination of silicon telluride Si2 Te3 Author(s) Ploog, K.;Stetter, W.;Nowitzki, A.;Schoenherr, E. Reference Materials Research Bulletin (1976), 11, 1147-1154 http://dx.doi.org/10.1016/0025-5408(76)90014-3(FULL TEXT) Golden Book of Phase Transitions, Wroclaw (2002), 1, 1-123 Unit Cell 7.430(5) 7.430(5) 13.482(7) 90. 90. 120. Vol 644.56 Z 4 Space Group P -3 1 c SG Number 163 Cryst Sys trigonal/rhombohedral Pearson hP20 Wyckoff i3 e R Value 0.07 Red Cell P 7.43 7.43 13.482 90 90 120 644.559 Trans Red 1.000 0.000 0.000 / 0.000 1.000 0.000 / 0.000 0.000 1.000 Comments Stable up to 673 K (2nd ref., Tomaszewski) The structure has been assigned a PDF number (calculated powder diffraction data): 01-075-0820 The structure has been assigned a PDF number (experimental powder diffraction data): 22-1323 Temperature factors available X-ray diffraction from single crystal Atom # OX SITE x y z SOF H Te 1 +0 12 i 0.3263(1) 0.0067(1) 0.1180(1) 1. 0 Si 1 +0 12 i 0.1916(11) 0.6831(14) 0.2230(7) 0.33(1) 0 Si 2 +0 12 i 0.0114(23) 0.1532(23) 0.2794(16) 0.18(1) 0 Si 3 +0 4 e 0 0 0.1659(9) 0.47(1) 0 Lbl Type B11 B22 B33 B12 B13 B23 Te1 Te0+ 3.38(6) 3.12(5) 3.66(6) 1.63(4) 1.05(4) 0.9014 Si1 Si0+ 1.40(45) 1.39(40) 2.75(47) 0.51(40) -.45(36) -.61(47) Si2 Si0+ 1.35(70) 0.11(70) 3.910(12) -.77(59) -1.16(84) -1.32(70) Si3 Si0+ 1.76(36) 1.76(36) 1.39(46) 0.88(18) 0 0 Std. Notes Transformation Method: Tidy Std. Cell 7.43 7.43 13.482 90 90 120 Std. Vol. 644.56 Std. Z 4 Std. SG P3-1C Std. Atom Atom # OX SITE x y z SOF Te 1 +0 12 i .32630 .00670 .11800 1. Si 1 +0 12 i .19160 .50850 .27700 .330 Si 2 +0 12 i .14180 .15320 .22060 .180 Si 3 +0 4 e 0 0 .16590 .470 *end for ICSD #30071 |
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