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yjh6887(½ð±Ò+8,VIP+0):ллÄãµÚÒ»¸ö»ØÓ¦ 7-10 16:38
In figure 4th£¬We can see that with the increase in the number of graft, single-walled nano-boron nitride (SWBNNTs) central electron density of the outer regularity of the changes shows that¡£For example,N = 2 in the map, the more biased towards the left side of the outer electron g-Office¡£N = 4 in the chart, because the outer electron transfer to the graft on both sides, resulting in boron nitride nanotubes central electron density decreased significantly.N = 6 in the diagram, the electron transfer similar to the case of N = 4, but the inner layer of the electronic local weakening, some were excited into s e p e, increasing the axial electron mobility, while the performance of more sp2 hybrid orbital formation
2Â¥2009-07-10 00:08:04
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MCWANDE

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yjh6887(½ð±Ò+10,VIP+0):ллÄãÄÜÈÏÕæ¶Ô´ýÎÒµÄÇóÖú 7-10 16:39
In Figure 4 one can see that with the increased number of grafting sites the electron density of the single-walled boron nitride nanotubes (SWBNNTs) varied regularly. For instance, for N=2 more outer shell electrons migrated to the grafting sites on the left side. For N=4 due to the migration of outer shell electrons to grafting sites on both ends, the electron density in the middle part of the SWBNNTs was reduced dramatically. In the case of N=6 although the electron migration resembled the case of N=4, the electron localization was diminished. This has resulted in the excitation of some of s electrons to p electrons, leading to improvement in electron mobility with formation of SP2 hybrid orbitals.

[ Last edited by MCWANDE on 2009-7-10 at 06:42 ]
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3Â¥2009-07-10 06:41:40
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yjh6887(½ð±Ò+12,VIP+0):»¹²»´í£¬Ð»Ð»£¡ 7-10 16:40
ÔÚͼ4ÖУ¬ÎÒÃÇ¿ÉÒÔ¿´µ½Ëæ×ŽÓÖ¦ÊýÁ¿Ôö¼Ó£¬µ¥±Úµª»¯ÅðÄÉÃ×£¨SWBNNTs£©ÖÐÑëÍâ²ãµç×ÓÃܶȱíÏÖ³öÃ÷ÏÔ¹æÂÉÐԱ仯¡£È磺ÔÚN=2µÄͼÖУ¬¸ü¶àµÄÍâ²ãµç×ÓÆ«Ïò×ó±ßµÄ½ÓÖ¦´¦¡£ÔÚN=4µÄͼÖУ¬ÒòÍâ²ãµç×ÓÏòÁ½±ß½ÓÖ¦´¦×ªÒÆ£¬Ôì³Éµª»¯ÅðÄÉÃ×¹ÜÖÐÑëµç×ÓÃܶÈÃ÷ÏÔ¼õÉÙ¡£ÔÚN=6µÄͼÖУ¬µç×Ó×ªÒÆÇé¿öÀàËÆN=4µÄÇé¿ö£¬µ«ÄÚ²ãµç×Ó¾ÖÓòÐÔÓÐËù¼õÈõ£¬µ¼Ö²¿·Ösµç×Ó±»¼¤·¢³Épµç×Ó£¬Ôö´óÖáÏòµç×ÓÁ÷¶¯ÐÔ£¬Í¬Ê±¿É±íÏÖ¸ü¶àµÄsp2ÔÓ»¯¹ìµÀµÄÐγɡ£

As is shown in Figure 4, central outer electron density in single-walled boron nano-turbes (SWBNNTs) showed regular changing as graft increased. For example, in figure when N=2, more outside electrons trended towards left side of graft. While, N=4 in chart, central electron density of SWBNNTs decreased significantly because outer electrons were transferred to graft for both sides. When N=6, the electron transfer was similar to the case of N = 4, but inner layer electronic local was weakened so that parts of electrons in S layer was excited into P electrons, increasing axial electron mobility, meanwhile more performances of sp2 hybrid orbital formation were completed.
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4Â¥2009-07-10 10:54:06
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