| ²é¿´: 16424 | »Ø¸´: 818 | |||
| ±¾Ìû²úÉú 1 ¸ö PC-EPI £¬µã»÷ÕâÀï½øÐв鿴 | |||
imewangweiÌú¸Ëľ³æ (ÖøÃûдÊÖ)
|
[½»Á÷]
Á½ÆªÎÄÕÂÉÏÏß, IEEE TED£¬É¢½ð±Ò
|
||
|
ieee transactions on electron devices Ó°ÏìÒò×Ó²»¸ß£¬µ«ÊÇÊÇ΢µç×ÓÁìÓòÄÚµÄÀÏÅÆÆÚ¿¯¡£Çë¶à¶à¹Ø×¢£¬Í¬Ðжà¶àÒýÓᣠ![]() ![]() wei wang, et al., "volatile resistive switching memory based on ag ion drift/diffusion--part i: numerical modeling". wei wang, et al., "volatile resistive switching memory based on ag ion drift/diffusion--part ii: compact modeling". https://ieeexplore.ieee.org/document/8786869 https://ieeexplore.ieee.org/document/8788455 ¸Õ·¢ÏÖ½ð±Ò»¹Ã»ÓÐÁìÍê£¬ÖØÐÂÉèÖÃÁËÿÈË2´ÎÁì½ð±Ò»ú»á¡£ Çë³æÓѵãÒ»ÏÂÂÛÎÄÁ´½Ó£¬Ò²¿ÉÒÔÏÂÔØpdfÎļþ£¬Ôö¼Ófull text views´ÎÊý£¬Ìá¸ßÎÄÕÂÆØ¹âÂÊ¡£¡£ [ Last edited by imewangwei on 2019-10-30 at 16:18 ] |
» ±¾ÌûÒÑ»ñµÃµÄºì»¨£¨×îÐÂ10¶ä£©
» ²ÂÄãϲ»¶
¹¤¿Æ²ÄÁÏ085601 279Çóµ÷¼Á
ÒѾÓÐ8È˻ظ´
26µ÷¼Á/²ÄÁÏ¿ÆÑ§Ó빤³Ì/×Ü·Ö295/ÇóÊÕÁô
ÒѾÓÐ7È˻ظ´
ѧ˶285Çóµ÷¼Á
ÒѾÓÐ9È˻ظ´
Ò»Ö¾Ô¸ÄÏ´ó»¯Ñ§339·ÖÇóµ÷¼Á£¬ËÄÁù¼¶Òѹý£¬ÓбÈÈü£¬ÓÐÎÄÕÂ
ÒѾÓÐ8È˻ظ´
283Çóµ÷¼Á£¬²ÄÁÏ¡¢»¯¹¤½Ô¿É
ÒѾÓÐ10È˻ظ´
²ÄÁÏÓ뻯¹¤Çóµ÷¼ÁÒ»Ö¾Ô¸ 985 ×Ü·Ö 295
ÒѾÓÐ4È˻ظ´
281Çóµ÷¼Á
ÒѾÓÐ8È˻ظ´
¸´ÊÔµ÷¼Á
ÒѾÓÐ6È˻ظ´
315Çóµ÷¼Á
ÒѾÓÐ7È˻ظ´
»¯Ñ§Ñ§Ë¶Çóµ÷¼Á
ÒѾÓÐ7È˻ظ´

ÑÞÑôÇçÌì
Ìú³æ (ÕýʽдÊÖ)
- Ó¦Öú: 0 (Ó×¶ùÔ°)
- ½ð±Ò: 107.2
- É¢½ð: 1209
- ºì»¨: 2
- Ìû×Ó: 801
- ÔÚÏß: 28.1Сʱ
- ³æºÅ: 10294694
- ×¢²á: 2018-09-14
- ÐÔ±ð: GG
- רҵ: ÎïÀíѧII
2Â¥2019-08-06 21:03:08
3Â¥2019-08-06 21:03:56
4Â¥2019-08-06 21:15:52
5Â¥2019-08-06 21:16:37
6Â¥2019-08-06 21:21:04
7Â¥2019-08-06 21:21:06
8Â¥2019-08-06 21:23:57
9Â¥2019-08-06 21:25:25
10Â¥2019-08-06 21:31:15














»Ø¸´´ËÂ¥
·Ö²»ÇåµÄÓÑÇé
10