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ieee transactions on electron devices Ó°ÏìÒò×Ó²»¸ß£¬µ«ÊÇÊÇ΢µç×ÓÁìÓòÄÚµÄÀÏÅÆÆÚ¿¯¡£Çë¶à¶à¹Ø×¢£¬Í¬Ðжà¶àÒýÓᣠ![]() ![]() wei wang, et al., "volatile resistive switching memory based on ag ion drift/diffusion--part i: numerical modeling". wei wang, et al., "volatile resistive switching memory based on ag ion drift/diffusion--part ii: compact modeling". https://ieeexplore.ieee.org/document/8786869 https://ieeexplore.ieee.org/document/8788455 ¸Õ·¢ÏÖ½ð±Ò»¹Ã»ÓÐÁìÍê£¬ÖØÐÂÉèÖÃÁËÿÈË2´ÎÁì½ð±Ò»ú»á¡£ Çë³æÓѵãÒ»ÏÂÂÛÎÄÁ´½Ó£¬Ò²¿ÉÒÔÏÂÔØpdfÎļþ£¬Ôö¼Ófull text views´ÎÊý£¬Ìá¸ßÎÄÕÂÆØ¹âÂÊ¡£¡£ [ Last edited by imewangwei on 2019-10-30 at 16:18 ] |
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