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[求助]
求几个专业名词的中文翻译
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是光电材料生长这块的文献 once the top-gated device geometry is employed, the device subthreshold slopes can be impressively reduced down to 91 mV dec −1 at room temperature. bulk mobility limit atomic stacking in the polar ⟨111⟩B direction stacking faults and polytypism back-gated FETs；top-gated FETs the interface in-plane relationship a high-κ dielectric carrier traps a dielectric layer of Al2O3 with 13.5 nm thickness was thermally evaporated, followed by a 10 h annealing at 100 °C in ambient for densification. 光响应的fast rise and decay times 场效应管制作方面 ： lift-off process 仿真方面： Vienna ab initio simulation package The Monkhorst−Pack k-point meshes 500 eV is set as the kinetic energy cutoff for the plane-wave basis 问题有点多能回答多少都行，小白谢谢大神们！ |
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