| 查看: 639 | 回复: 1 | ||
[求助]
求几个专业名词的中文翻译
|
|
是光电材料生长这块的文献 once the top-gated device geometry is employed, the device subthreshold slopes can be impressively reduced down to 91 mV dec −1 at room temperature. bulk mobility limit atomic stacking in the polar ⟨111⟩B direction stacking faults and polytypism back-gated FETs；top-gated FETs the interface in-plane relationship a high-κ dielectric carrier traps a dielectric layer of Al2O3 with 13.5 nm thickness was thermally evaporated, followed by a 10 h annealing at 100 °C in ambient for densification. 光响应的fast rise and decay times 场效应管制作方面 ： lift-off process 仿真方面： Vienna ab initio simulation package The Monkhorst−Pack k-point meshes 500 eV is set as the kinetic energy cutoff for the plane-wave basis 问题有点多能回答多少都行，小白谢谢大神们！ |
回复此楼» 猜你喜欢
祈祷自己至少3A2B上会啊！
已经有5人回复
-
航天502所 高瑛珂博士 婚内征婚 欺骗女性开房
已经有28人回复
-
山东省优青 青B通知了？？？？
已经有3人回复
-
地球科学部D01口青年基金，最低几A几B几C才能有几率中呀。
已经有5人回复
-
26/27申博
已经有4人回复
2楼2019-03-04 08:46:56