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bluersky
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ÇúÏßÓë×Ý×ø±ê£½0µÄºá×ø±êµÄ½Ø¾à¾Í½û´ø¿í¶È¡£ Band gap (Eg) energies can be estimated from UV-vis DRS spectra. Semiconductors are classified to be indirect or direct according to the lowest allowed electronic transition. The relation between absorption coefficient (¦Á) and incident photon energy (h¦Í) can be written as ¦Á = Bd(h¦Í - Eg)1/2/h¦Í for allowed direct transitions, where Bd is the absorption constants. Plot of (¦Áh¦Í)1/2 and (¦Áh¦Í)2 versus h¦Í from the spectra data of C-TiO2 and V2O5 in figure 3a are presented in figure 3b and 3c. The Eg estimated from the intercept of the tangents to the plots is 2.76 and 2.24 eV for C-TiO2 and V2O5, respectively. |
2Â¥2009-05-11 14:03:54
Alex122
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3Â¥2009-05-11 14:07:41
kepler
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4Â¥2009-05-11 23:22:10
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5Â¥2009-05-12 10:53:13
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6Â¥2009-06-12 09:36:57
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7Â¥2011-01-21 15:20:01














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