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[交流]
深圳第三代半导体研究院 Epi/Device/Process/FA Engineer Openings
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WinS (shenzhen institute of wind bandgap semiconductors深圳第三代半导体研究院) is seeking the following job candidates. the r&d team consisting of senior vps /scientist/engineers/ with 10~20+ years experiences in industry from u.s. candidates with semiconductor materials/device/process background and fab experience are highly recommended. package is negotiable, benefits comparable to sustech university（南方科技大学） Candidates with ph.d from top 150 universities are qualified to get “孔雀计划a/b/c” with 3.0 to 1.6 million rmb benefits from shenzhen government, and will be doubled by longhua district government. (for example, if you get “孔雀计划c”, you will get 3.2 million rmb in 5 years, no tax; b for 4.0 million rmb and a for 6 million rmb, respectively). Please send your c.v. and cover letter to ming.lu@iwins.org if interested, thanks. 1. Senior MOCVD Epi Engineer Responsibilities: • Responsible for the general operation of MOCVD systems and team management. • Evaluate epitaxial material using the various characterization tools. • Troubleshooting and resolve materials and MOCVD equipment related issues. • Develop next-generation GaN-based UVA/Blue/Green LED Epi wafers with shorter process time, high uniformity, high yield, high ESD tolerance, high LOP and etc. Qualifications: • MS/ME or Ph.D. (with 5+ years of applicable hands-on experience) in Physics, Chemical Engineering, Material Science, Electrical Engineering, or other related discipline(s). • 5 (5+) years of direct experience with commercial MOCVD process and equipment technology. Prior track record of GaN epitaxial material growth is a plus. • Prior experience in III-V materials characterization techniques such as: High resolution x-ray diffraction (XRD), Photoluminescence (PL), Electroluminescence (EL), Atomic force microscopy (AFM), Ellipsometry, SIMS, etc. is strongly desired. • Experience in semiconductor manufacturing epitaxy utilizing design of experiment (DOE), statistical process control (SPC), and methodical data analysis for process performance improvement and structured (root-cause) troubleshooting is essential. • Demonstrated proficiency in the use of statistical analysis programs for gathering and analyzing process data related to performance specifications, such as JMP, MiniTab. • A highly-motivated self-starter with ability to work independently and a strong team player with good communication skills. • Ability to adapt to changing priorities, thriving on technical challenges within and outside of core area of expertise, and to interact effectively across multi-functional teams. 2. MOCVD Epi Engineer Responsibilities: • Responsible for the operation and general maintenance of MOCVD systems. • Maintain SPC charts, growth databases, process sheets and equipment logs. • Responsible for following safety procedures and protocols in MOCVD lab. • Operate epi characterization related tools • Evaluate epitaxial material using the various characterization methods. • Work with epi team to resolve materials and MOCVD equipment related issues. Qualifications: • Ph.D or MS/ME (with 3+ years of applicable hands-on experience) in Physics, Chemical Engineering, Material Science, Electrical Engineering, or other related discipline(s). • 3 (3+) years of direct experience with commercial MOCVD process and equipment technology. Prior track record of GaN epitaxial material growth is a plus. • Prior experience in III-V materials characterization techniques such as: High resolution x-ray diffraction (XRD), Photoluminescence (PL), Electroluminescence (EL), Atomic force microscopy (AFM), Ellipsometry, SIMS, etc. is strongly desired. • Experience in semiconductor manufacturing epitaxy utilizing design of experiment (DOE), statistical process control (SPC), and methodical data analysis for process performance improvement and structured (root-cause) troubleshooting is essential. • Demonstrated proficiency in the use of statistical analysis programs for gathering and analyzing process data related to performance specifications, such as JMP, MiniTab. • A highly-motivated self-starter with ability to work independently and a strong team player with good communication skills. • Ability to adapt to changing priorities, thriving on technical challenges within and outside of core area of expertise, and to interact effectively across multi-functional teams. 3. Process & Device Engineer Responsibilities: • Responsible for the semiconductor process development of GaN-based LED devices. • Maintain SPC charts, process databases, process sheets and equipment logs. • Responsible for following safety procedures, general operation and maintenance protocols in chip FAB. • Evaluate and analyze LED chip performance using various characterization methods. • Work with chip team to troubleshoot and resolve process and device related issues. Qualifications: • MS/ME (with 3+ years industry experiences), Ph.D (with 1+ year industry experience) in Physics, Chemical Engineering, Material Science, Electrical Engineering, or other related discipline(s). • Experience with chip fabrication in semiconductor processing, such as photolithography, clean, etch, thin film deposition, anneal and etc. • Experience working with III-V Semiconductors (GaN preferred) is highly desirable. Prior experience in IC industry is a big plus. • Experience in semiconductor chip processing utilizing design of experiment (DOE), statistical process control (SPC), and methodical data analysis for process performance improvement and structured (root-cause) troubleshooting is essential. • Demonstrated proficiency in the use of statistical analysis programs for gathering and analyzing process data related to performance specifications, such as JMP, MiniTab and etc. • A highly-motivated self-starter with ability to work independently and a strong team player with good communication skills. • Ability to adapt to changing priorities, thriving on technical challenges within and outside of core area of expertise, and to interact effectively across multi-functional teams. 4. FA Engineer Responsibilities: • Responsible for the characterization of LED devices. • Responsible for following safety procedures and protocols in characterization FAB. • Evaluate LED chip performance using the various characterization methods. • Works with team to resolve process and device related issues. Qualifications: • MS/ME (with 3+ years industry experiences), Ph.D (with 1+ year industry experience) in Physics, Chemical Engineering, Material Science, Electrical Engineering, or other related discipline(s). • Experience with characterization of LED devices, such as COT, LOP, IS, L-I-V, EQE, FIB, SEM and aging test. Understand the semiconductor optoelectronic device physics. • Experience in semiconductor backend processing utilizing design of experiment (DOE), statistical process control (SPC), and methodical data analysis for process performance improvement and structured (root-cause) troubleshooting is essential. • Demonstrated proficiency in the use of statistical analysis programs for gathering and analyzing process data related to performance specifications, such as JMP, MiniTab and etc. • A highly-motivated self-starter with ability to work independently and a strong team player with good communication skills. • Ability to adapt to changing priorities, thriving on technical challenges within and outside of core area of expertise, and to interact effectively across multi-functional teams. [ Last edited by reallyworld on 2019-1-24 at 19:42 ] [ 来自版块群 广东 ] |
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reallyworld(金币+1): 谢谢参与
reallyworld(金币+1): 谢谢参与
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47楼2019-01-30 10:33:28
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具体待遇还得看个人，都是可以谈的。比如大千水准应该可以谈到80-100K，青千水准应该可以40-60K。当然只是类比，因为我们主要做面向工业界的项目，不发文章。 发自小木虫Android客户端 |
48楼2019-01-30 11:50:52
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嗯嗯我知道是面向工业界的项目.....所以想问一般能拿到孔雀C水平的海归phd去做device engineer /process engineer能给到多少工资（扣除孔雀补贴之外）.....能到青千水平的研究背景的没谁去做这些岗吧…… 发自小木虫IOS客户端 |
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