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[½»Á÷] ÉîÛÚµÚÈý´ú°ëµ¼ÌåÑо¿Ôº Epi/Device/Process/FA Engineer Openings

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WinS (shenzhen institute of wind bandgap semiconductorsÉîÛÚµÚÈý´ú°ëµ¼ÌåÑо¿Ôº) is seeking the following job candidates. the r&d team consisting of senior vps /scientist/engineers/ with 10~20+ years experiences in industry from u.s.  candidates with semiconductor materials/device/process background and fab experience are highly recommended. package is negotiable, benefits comparable to sustech university£¨ÄÏ·½¿Æ¼¼´óѧ£©  

Candidates with ph.d from top 150 universities are qualified to get ¡°¿×ȸ¼Æ»®a/b/c¡± with 3.0 to 1.6 million rmb benefits from shenzhen government, and will be doubled by longhua district government. (for example, if you get ¡°¿×ȸ¼Æ»®c¡±, you will get 3.2 million rmb in 5 years, no tax; b for 4.0 million rmb and a for 6 million rmb, respectively).

Please send your c.v. and cover letter to ming.lu@iwins.org  if interested, thanks.


1. Senior MOCVD Epi Engineer

Responsibilities:
•        Responsible for the general operation of MOCVD systems and team management.
•        Evaluate epitaxial material using the various characterization tools.
•        Troubleshooting and resolve materials and MOCVD equipment related issues.
•        Develop next-generation GaN-based UVA/Blue/Green LED Epi wafers with shorter process time, high uniformity, high yield, high ESD tolerance, high LOP and etc.

Qualifications:
•        MS/ME or Ph.D. (with 5+ years of applicable hands-on experience) in Physics, Chemical Engineering, Material Science, Electrical Engineering, or other related discipline(s).
•        5 (5+) years of direct experience with commercial MOCVD process and equipment technology. Prior track record of GaN epitaxial material growth is a plus.
•        Prior experience in III-V materials characterization techniques such as: High resolution x-ray diffraction (XRD), Photoluminescence (PL), Electroluminescence (EL), Atomic force microscopy (AFM), Ellipsometry, SIMS, etc. is strongly desired.
•        Experience in semiconductor manufacturing epitaxy utilizing design of experiment (DOE), statistical process control (SPC), and methodical data analysis for process performance improvement and structured (root-cause) troubleshooting is essential.
•        Demonstrated proficiency in the use of statistical analysis programs for gathering and analyzing process data related to performance specifications, such as JMP, MiniTab.
•        A highly-motivated self-starter with ability to work independently and a strong team player with good communication skills.
•        Ability to adapt to changing priorities, thriving on technical challenges within and outside of core area of expertise, and to interact effectively across multi-functional teams.


2. MOCVD Epi Engineer

Responsibilities:
•        Responsible for the operation and general maintenance of MOCVD systems.
•        Maintain SPC charts, growth databases, process sheets and equipment logs.
•        Responsible for following safety procedures and protocols in MOCVD lab.
•        Operate epi characterization related tools
•        Evaluate epitaxial material using the various characterization methods.
•        Work with epi team to resolve materials and MOCVD equipment related issues.

Qualifications:
•        Ph.D or MS/ME (with 3+ years of applicable hands-on experience) in Physics, Chemical Engineering, Material Science, Electrical Engineering, or other related discipline(s).
•        3 (3+) years of direct experience with commercial MOCVD process and equipment technology. Prior track record of GaN epitaxial material growth is a plus.
•        Prior experience in III-V materials characterization techniques such as: High resolution x-ray diffraction (XRD), Photoluminescence (PL), Electroluminescence (EL), Atomic force microscopy (AFM), Ellipsometry, SIMS, etc. is strongly desired.
•        Experience in semiconductor manufacturing epitaxy utilizing design of experiment (DOE), statistical process control (SPC), and methodical data analysis for process performance improvement and structured (root-cause) troubleshooting is essential.
•        Demonstrated proficiency in the use of statistical analysis programs for gathering and analyzing process data related to performance specifications, such as JMP, MiniTab.
•        A highly-motivated self-starter with ability to work independently and a strong team player with good communication skills.
•        Ability to adapt to changing priorities, thriving on technical challenges within and outside of core area of expertise, and to interact effectively across multi-functional teams.

3. Process & Device Engineer

Responsibilities:
•        Responsible for the semiconductor process development of GaN-based LED devices.
•        Maintain SPC charts, process databases, process sheets and equipment logs.
•        Responsible for following safety procedures, general operation and maintenance protocols in chip FAB.
•        Evaluate and analyze LED chip performance using various characterization methods.
•        Work with chip team to troubleshoot and resolve process and device related issues.

Qualifications:

•        MS/ME (with 3+ years industry experiences), Ph.D (with 1+ year industry experience) in Physics, Chemical Engineering, Material Science, Electrical Engineering, or other related discipline(s).
•        Experience with chip fabrication in semiconductor processing, such as photolithography, clean, etch, thin film deposition, anneal and etc.
•        Experience working with III-V Semiconductors (GaN preferred) is highly desirable. Prior experience in IC industry is a big plus.
•        Experience in semiconductor chip processing utilizing design of experiment (DOE), statistical process control (SPC), and methodical data analysis for process performance improvement and structured (root-cause) troubleshooting is essential.
•        Demonstrated proficiency in the use of statistical analysis programs for gathering and analyzing process data related to performance specifications, such as JMP, MiniTab and etc.
•        A highly-motivated self-starter with ability to work independently and a strong team player with good communication skills.
•        Ability to adapt to changing priorities, thriving on technical challenges within and outside of core area of expertise, and to interact effectively across multi-functional teams.



4. FA Engineer

Responsibilities:
•        Responsible for the characterization of LED devices.
•        Responsible for following safety procedures and protocols in characterization FAB.
•        Evaluate LED chip performance using the various characterization methods.
•        Works with team to resolve process and device related issues.

Qualifications:

•        MS/ME (with 3+ years industry experiences), Ph.D (with 1+ year industry experience) in Physics, Chemical Engineering, Material Science, Electrical Engineering, or other related discipline(s).
•        Experience with characterization of LED devices, such as COT, LOP, IS, L-I-V, EQE, FIB, SEM and aging test. Understand the semiconductor optoelectronic device physics.
•        Experience in semiconductor backend processing utilizing design of experiment (DOE), statistical process control (SPC), and methodical data analysis for process performance improvement and structured (root-cause) troubleshooting is essential.
•        Demonstrated proficiency in the use of statistical analysis programs for gathering and analyzing process data related to performance specifications, such as JMP, MiniTab and etc.
•        A highly-motivated self-starter with ability to work independently and a strong team player with good communication skills.
•        Ability to adapt to changing priorities, thriving on technical challenges within and outside of core area of expertise, and to interact effectively across multi-functional teams.

[ Last edited by reallyworld on 2019-1-24 at 19:42 ]

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