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[资源] 【资源】【经典巨著】介电铁电系列 I《Defects in High-k Gate Dielectric Stacks》

Defects in High-k Gate Dielectric Stacks
Nano-Electronic Semiconductor Devices
Book Series NATO Science Series II: Mathematics, Physics and Chemistry
ISSN 1568-2609
Subject Engineering, Electronic and Computer Engineering, Electronics and Microelectronics, Instrumentation, Physics and Applied Physics in Engineering and Condensed Matter
Volume Volume 220
Subject Engineering, Electronic and Computer Engineering, Electronics and Microelectronics, Instrumentation, Physics and Applied Physics in Engineering and Condensed Matter
Publisher Springer Netherlands
DOI 10.1007/1-4020-4367-8
Copyright 2006
ISBN 978-1-4020-4365-9 (Print) 978-1-4020-4367-3 (Online)
Subject Collection Engineering
Subject Engineering, Electronic and Computer Engineering, Electronics and Microelectronics, Instrumentation, Physics and Applied Physics in Engineering and Condensed Matter
SpringerLink Date Wednesday, February 15, 2006

38 Chapters
Front Matter -XI
1.PVD-HIGH-K GATE DIELECTRICS WITH FUSI GATE AND INFLUENCE OF PDA TREATMENT ON ON-STATE DRIVE CURRENT 1-15
2.EXTREMELY HIGH-DENSITY CAPACITORS WITH ALD HIGH-K DIELECTRIC LAYERS 17-28
3.TOWARDS UNDERSTANDING OF PROCESSINGNANOSTRUCTURE- PROPERTY INTER-RELATIONSHIPS IN HIGHK/METAL GATE STACKS 29-40
4.ON THE CHARACTERIZATION OF ELECTRONICALLY ACTIVE DEFECTS IN HIGH-k GATE DIELECTRICS 41-59
5.INELASTIC ELECTRON TUNNELLING SPECTROSCOPY (IETS) STUDY OF HIGH-K DIELECTRICS 61-72
6.CHARACTERIZATION AND MODELING OF DEFECTS IN HIGH-K MEASUREMENTS LAYERS THROUGH FAST ELECTRICAL TRANSIENT 73-84
7.CHARACTERIZATION OF ELECTRICALLY ACTIVE DEFECTS IN HIGH-K GATE DIELECTRICS USING CHARGE PUMPING 85-96
8.IMPACT OF HIGH-k PROPERTIES ON MOSFET ELECTRICAL CHARACTERISTICS 97-108
9.STRUCTURAL EVOLUTION AND POINT DEFECTS IN METAL OXIDE-BASED HIGH-k GATE DIELECTRICS 109-121
10.DISORDERED STRUCTURE AND DENSITY OF GAP STATES IN HIGH-PERMITTIVITY THIN SOLID FILMS 123-134
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31.DIELECTRIC AND INFRARED PROPERTIES OF ULTRATHIN SiO2 LAYERS ON Si(100) 385-396
32.THE (1 0 0) SURFACE OF SEMICONDUCTOR SILICON (IN PASSIVATION PRACTICAL CONDITIONS): PREPARATION, EVOLUTION, 397-410
33.CORRELATION BETWEEN DEFECTS, LEAKAGE CURRENTS AND CONDUCTION MECHANISMS IN THIN HIGH-K DIELECTRIC LAYERS 411-422
34.ELECTRONIC STRUCTURE OF ZRO2 AND HFO2 423-434
35.HIGH-K GATE STACKS ELECTRICAL CHARACTERIZATION AT THE NANOSCALE USING CONDUCTIVE-AFM 435-446
36.MAGNETIC DEFECTS IN PRISTINE AND HYDROGENTERMINATED NANODIAMONDS 447-456
37.ON THE IMPORTANCE OF ATOMIC PACKING IN DETERMINING DIELECTRIC PERMITTIVITIES 457-470
38.INVESTIGATION OF THE ELECTRONIC PROPERTIES OF THIN DIELECTRIC FILMS BY SCANNING PROBE MICROSCOPY 471-479
Back Matter 481-492

http://www.namipan.com/d/9429cc7 ... 4f88dd2ad71dcba7e02

[ Last edited by ufoer on 2009-4-14 at 01:09 ]

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