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【资源】【经典巨著】介电铁电系列 I《Defects in High-k Gate Dielectric Stacks》
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Defects in High-k Gate Dielectric Stacks Nano-Electronic Semiconductor Devices Book Series NATO Science Series II: Mathematics, Physics and Chemistry ISSN 1568-2609 Subject Engineering, Electronic and Computer Engineering, Electronics and Microelectronics, Instrumentation, Physics and Applied Physics in Engineering and Condensed Matter Volume Volume 220 Subject Engineering, Electronic and Computer Engineering, Electronics and Microelectronics, Instrumentation, Physics and Applied Physics in Engineering and Condensed Matter Publisher Springer Netherlands DOI 10.1007/1-4020-4367-8 Copyright 2006 ISBN 978-1-4020-4365-9 (Print) 978-1-4020-4367-3 (Online) Subject Collection Engineering Subject Engineering, Electronic and Computer Engineering, Electronics and Microelectronics, Instrumentation, Physics and Applied Physics in Engineering and Condensed Matter SpringerLink Date Wednesday, February 15, 2006 38 Chapters Front Matter -XI 1.PVD-HIGH-K GATE DIELECTRICS WITH FUSI GATE AND INFLUENCE OF PDA TREATMENT ON ON-STATE DRIVE CURRENT 1-15 2.EXTREMELY HIGH-DENSITY CAPACITORS WITH ALD HIGH-K DIELECTRIC LAYERS 17-28 3.TOWARDS UNDERSTANDING OF PROCESSINGNANOSTRUCTURE- PROPERTY INTER-RELATIONSHIPS IN HIGHK/METAL GATE STACKS 29-40 4.ON THE CHARACTERIZATION OF ELECTRONICALLY ACTIVE DEFECTS IN HIGH-k GATE DIELECTRICS 41-59 5.INELASTIC ELECTRON TUNNELLING SPECTROSCOPY (IETS) STUDY OF HIGH-K DIELECTRICS 61-72 6.CHARACTERIZATION AND MODELING OF DEFECTS IN HIGH-K MEASUREMENTS LAYERS THROUGH FAST ELECTRICAL TRANSIENT 73-84 7.CHARACTERIZATION OF ELECTRICALLY ACTIVE DEFECTS IN HIGH-K GATE DIELECTRICS USING CHARGE PUMPING 85-96 8.IMPACT OF HIGH-k PROPERTIES ON MOSFET ELECTRICAL CHARACTERISTICS 97-108 9.STRUCTURAL EVOLUTION AND POINT DEFECTS IN METAL OXIDE-BASED HIGH-k GATE DIELECTRICS 109-121 10.DISORDERED STRUCTURE AND DENSITY OF GAP STATES IN HIGH-PERMITTIVITY THIN SOLID FILMS 123-134 ………………………………………… ………………………………………… ………………………………………… ………………………………………… ………………………………………… ………………………………………… 31.DIELECTRIC AND INFRARED PROPERTIES OF ULTRATHIN SiO2 LAYERS ON Si(100) 385-396 32.THE (1 0 0) SURFACE OF SEMICONDUCTOR SILICON (IN PASSIVATION PRACTICAL CONDITIONS): PREPARATION, EVOLUTION, 397-410 33.CORRELATION BETWEEN DEFECTS, LEAKAGE CURRENTS AND CONDUCTION MECHANISMS IN THIN HIGH-K DIELECTRIC LAYERS 411-422 34.ELECTRONIC STRUCTURE OF ZRO2 AND HFO2 423-434 35.HIGH-K GATE STACKS ELECTRICAL CHARACTERIZATION AT THE NANOSCALE USING CONDUCTIVE-AFM 435-446 36.MAGNETIC DEFECTS IN PRISTINE AND HYDROGENTERMINATED NANODIAMONDS 447-456 37.ON THE IMPORTANCE OF ATOMIC PACKING IN DETERMINING DIELECTRIC PERMITTIVITIES 457-470 38.INVESTIGATION OF THE ELECTRONIC PROPERTIES OF THIN DIELECTRIC FILMS BY SCANNING PROBE MICROSCOPY 471-479 Back Matter 481-492 http://www.namipan.com/d/9429cc7 ... 4f88dd2ad71dcba7e02 [ Last edited by ufoer on 2009-4-14 at 01:09 ] |
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Defects in High-k Gate Dielectric Stacks
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请问能不能把《Defects in High-k Gate Dielectric Stacks》重新传一下，或者给我发一份啊，谢谢！！ fujian0715@126.com |
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