| 查看: 2191 | 回复: 2 | |||
| 当前只显示满足指定条件的回帖，点击这里查看本话题的所有回帖 | |||
[交流]
新加坡-MIT科研联盟中心(SMART）招聘博士后研究人员 已有1人参与
|
|||
| 具体内容见回复帖。因被提示“发过类似内容”而无法发布。 |
回复此楼» 猜你喜欢
为什么网上很多人说本周 12号出结果
已经有4人回复
-
基金中了
已经有15人回复
-
帮忙看看fileCode
已经有8人回复
-
小木虫上这么多卖论文的，真有人买论文么？感觉没必要啊
已经有3人回复
-
FileCode能看出啥？
已经有15人回复
-
filecode
已经有8人回复
-
确定了，国自然21号放榜
已经有7人回复
-
综述论文作为代表作会不会影响评审专家的印象分？
已经有11人回复
-
关于代码变化问题，想知道的进来
已经有24人回复
-
静等基金结果
已经有16人回复
3楼2018-07-10 16:35:16
|
The Singapore-MIT Alliance for Research and Technology (SMART) is a major research enterprise established by the Massachusetts Institute of Technology (MIT) in partnership with the National Research Foundation of Singapore (NRF) in 2007. SMART is MIT\'s first, and to-date only, research centre outside the United States. You can find more details about SMART on https://smart.mit.edu/about-smart/about-smart. Low Energy Electronic Systems (LEES) (IRG) is one of the Interdisciplinary Research Groups (IRGs) under SMART, aiming to identify new integrated circuit technologies that become the new added value for reduced energy per function, lower power consumption and higher performance in our electronics infrastructure. More details about LEES can be found on https://smart.mit.edu/research/lees/about-lees. We are looking for PostDoc Associate in the area of microelectronic and nanoelectronic devices, particularly on GaN based high electron mobility transistors (HEMTs). The successful candidate will join LEES and be involved the team’s role of developing technologies for novel semiconductor devices, circuits and systems. The work involves layout design, process development, fabrication, characterization, device physics study and simulation of GaN based transistors for the next-generation communication and power electronics applications. This PostDoc position will have a strong focus on the research and development of Si-CMOS compatible fabrication technologies of GaN HEMTs on silicon substrates with high frequency operations up to E-band (60-90 GHz). In addition, this position will also take the responsibility of collaboration with colleagues and industry to realize 200-mm-wafer-size Si-CMOS and GaN integration. The successful candidate will be expected to have strong experience and a high level of proficiency in the area of semiconductor devices physics and fabrication, and initiative to develop new device structures and fabrication technologies to generate publications and patents. Desired skills and experience (for the PostDoc candidate): • PhD degree in microelectronics, applied physics or a related field; • Semiconductor fabrication experience in a cleanroom, using tools including but not limited to mask aligner, wet bench, dry etcher, e-beam evaporator, sputter, PECVD, RTA, E-beam lithography etc.; • Knowledge of semiconductor transistor physics and fabrication process, particularly of field effect transistor (FET) and high electron mobility transistor (HEMT); • Knowledge of material physics about Gallium Nitride (GaN); • Knowledge of RF and mmWave technologies, particularly of RF/mmWave characterization for transistors, including small-signal S-parameter, noise and load-pull; • Programming with MATLAB, Labview etc.; • Experience with physics-based semiconductor CAD software, e. g. Silvaco TCAD; • Good command of written and spoken English; • Good collaboration with colleagues. The postdoctoral associate will work with an integrated team of faculty, researchers and students from SMART, MIT and Singapore partners. We welcome interested applicants to submit a full CV including a list of publications to Dr. LIU, Zhihong (zhihong@smart.mit.edu). |
2楼2018-06-27 20:34:35
100